Patents by Inventor Vincent Thierry

Vincent Thierry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Driver circuit and method with reduced DI/DT and having delay compensation
    Patent number: 7667524
    Abstract: A method of driving a power transistor switch comprising: receiving a drive input signal; converting the drive input signal into a converted drive input signal; and providing the converted gate drive input signal to a control electrode of the switch to turn on the switch, the converted drive input signal having three regions with respect to time, each having a slope, a first region in time having a first slope up to a Miller Plateau of the switch; a second region in time having a second slope with a reduced slope compared with the first slope; and a third region having a third slope that is greater than the second slope, whereby the control electrode voltage rapidly reaches the Miller Plateau voltage, then more slowly reaches a threshold voltage of the switch and then, when the switch has substantially fully turned on, the control electrode voltage is rapidly increased. The switch delay time is also maintained substantially constant by adjusting the transistor control electrode precharge voltage.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: February 23, 2010
    Assignee: International Rectifier Corporation
    Inventors: Vincent Thierry, Bruno Nadd, Andre Mourrier
  • Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
    Patent number: 6300146
    Abstract: A power MOSFET die and a logic and protection circuit die are mounted on a common lead frame pad, such as a TO220 lead frame pad. The logic and protection circuit die includes a MOSFET that is connected in parallel with the power MOSFET but which is smaller than the power MOSFET and which dissipates power at a predetermined fraction of that of the power MOSFET. The logic and protection circuit die also includes a temperature sensor that is in close proximity to the MOSFET and determines the temperature of the MOSFET. The die also includes another temperature sensor that is located distant from the MOSFET to determine the temperature of the lead frame. The temperature of the power MOSFET can be determined from the temperature measured by these two sensors and from the ratio of the power dissipated by the two MOSFETs.
    Type: Grant
    Filed: April 14, 2000
    Date of Patent: October 9, 2001
    Assignee: International Rectifier Corp.
    Inventor: Vincent Thierry
  • Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
    Patent number: 6137165
    Abstract: A power MOSFET die and a logic and protection circuit die are mounted on a common lead frame pad, such as a TO220 lead frame pad. The logic and protection circuit die includes a MOSFET that is connected in parallel with the power MOSFET but which is smaller than the power MOSFET and which dissipates power at a predetermined fraction of that of the power MOSFET. The logic and protection circuit die also includes a temperature sensor that is in close proximity to the MOSFET and determines the temperature of the MOSFET. The die also includes another temperature sensor that is located distant from the MOSFET to determine the temperature of the lead frame. The temperature of the power MOSFET can be determined from the temperature measured by these two sensors and from the ratio of the power dissipated by the two MOSFETs.
    Type: Grant
    Filed: June 25, 1999
    Date of Patent: October 24, 2000
    Assignee: International Rectifier Corp.
    Inventor: Vincent Thierry