Abstract: An apparatus, in accordance with one embodiment, includes a superjunction device having a voltage sustaining layer formed of a semiconductor material and a dopant in the voltage sustaining layer. The dopant is for distributing an electric field within the voltage sustaining layer. The dopant is more concentrated along a sidewall of the voltage sustaining layer than toward a center of the voltage sustaining layer, the sidewall extending at least a portion of the distance between a top surface and a bottom surface of a voltage sustaining layer. Methods of electric field-enhanced dopant diffusion to form a superjunction device are also presented.

Abstract: Ultraviolet light sources such as UV and DUV laser diodes and light emitting diodes (LEDs) are described. The UV light source may comprise at least one quantum well with first and second photoconductive layers on opposite sides thereof. The UV light source may further comprise at least one optical pump configured to direct pump light to the UV light emitter. The pump light may have a photon energy less than the band gap of the at least one quantum well to increase the conductivity of electrons and holes in the first and second photoconductive layers. The electrons and holes can thereby propagate to the quantum well where at least some of the electrons and holes combine resulting in the emission of UV light.

Abstract: An apparatus includes a heterostructure including a substrate of Group-III-nitride material, a source layer including a dopant positioned on a surface of the substrate, and a conductive cap layer positioned on the source layer. A method of electric field-enhanced impurity diffusion includes obtaining a heterostructure including a substrate of Group-III-nitride semiconductor material, a source layer including a dopant positioned directly on the substrate, and a conductive cap layer positioned above the source layer, and applying a thermal annealing treatment to the heterostructure. An electric field gradient is established within the source layer and the cap layer for causing diffusion of an element from the substrate to the cap layer, and for causing diffusion of the dopant from the source layer to a former location of the element in the substrate thereby changing a conductivity and/or magnetic characteristic of the substrate.

Abstract: In accordance with one aspect of the presently disclosed inventive concepts, a magnet includes a material having a chemical formula: SmFe3(Ni1?xCox)2, where x is greater than 0 and x is less than 1.

Abstract: In one embodiment, an alloy includes: Zr; Fe; Cu; Ta in an amount from about 1 wt % to about 3 wt %; and one or more optional constituents selected from: Ti, Be, and Nb; and wherein the alloy comprises a ductile phase and a nanoprecipitate hard phase. According to another embodiment, a method of forming an inert matrix nuclear fuel includes: packing a hollow structure with fuel pellets and alloy precursor pellets; heating the fuel pellets and the alloy precursor pellets to at least a melting temperature of an alloy to be formed by melting the alloy precursor pellets; and solidifying the alloy into a matrix surrounding the fuel pellets. The alloy precursor pellets independently comprise: Zr; Fe; Cu; Ta present in an amount from about 1 to about 3 wt %; and one or more optional alloy constituents selected from: Ti, Be, and Nb.

Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Abstract: In one embodiment, an alloy includes: Zr; Fe; Cu; Ta in an amount from about 1 wt % to about 3 wt %; and one or more optional constituents selected from: Ti, Be, and Nb; and wherein the alloy comprises a ductile phase and a nanoprecipitate hard phase. According to another embodiment, a method of forming an inert matrix nuclear fuel includes: packing a hollow structure with fuel pellets and alloy precursor pellets; heating the fuel pellets and the alloy precursor pellets to at least a melting temperature of an alloy to be formed by melting the alloy precursor pellets; and solidifying the alloy into a matrix surrounding the fuel pellets. The alloy precursor pellets independently comprise: Zr; Fe; Cu; Ta present in an amount from about 1 to about 3 wt %; and one or more optional alloy constituents selected from: Ti, Be, and Nb.

Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Abstract: According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

Abstract: In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25° C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

Abstract: According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

Abstract: In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25° C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

Abstract: A method and tool for conducting charged-particle beam direct write lithography is disclosed. A disclosed method involves condensing an initial design file down to a set of profiles and a pattern of relative locations to form a formatted pattern file. The formatted pattern file is adjusted to accommodate desired pattern corrections. Portions of the formatted pattern records are extracted to form data strips that have a plurality of channels with a pattern of profiles and spatial indicators. Data strips are sequentially read to construct a printable pattern of profiles and spatial indicators that specify the locations of the profiles. Additionally, the pattern of profiles are sequentially printed from each data strip onto a substrate to form the desired pattern on the substrate.

Abstract: A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Abstract: Method and apparatus for achieving an intensity modulated electron blanker are disclosed. An apparatus includes a cathode exposed to an activation source to generate an electron beam. Cathode control circuitry adjusts a cathode control amplifier to regulate cathode voltage and the potential of the electron beam. In some approaches the electron beam potential is used to control the blanking frequency, switching speeds, and duty cycle. In another approach electron generating beams directed on to the cathode are modulated to control the electron beam.

Abstract: A method and tool for conducting charged-particle beam direct write lithography is disclosed. A disclosed method involves condensing an initial design file down to a set of profiles and a pattern of relative locations to form a formatted pattern file. The formatted pattern file is adjusted to accommodate desired pattern corrections. Portions of the formatted pattern records are extracted to form data strips that have a plurality of channels with a pattern of profiles and spatial indicators. Data strips are sequentially read to construct a printable pattern of profiles and spatial indicators that specify the locations of the profiles. Additionally, the pattern of profiles are sequentially printed from each data strip onto a substrate to form the desired pattern on the substrate.

Abstract: One embodiment relates to a dynamic pattern generator for controllably reflecting charged particles. The generator includes at least a controllable light emitter array, an optical lens, and an array of light-sensitive devices. The controllable light emitter array is configured to emit a pattern of light. The optical lens is configured to demagnify the pattern of light. The array of light-sensitive devices is configured to receive the demagnified pattern of light and to produce a corresponding pattern of surface voltages. Other embodiments and features are also disclosed.