Patents by Inventor Vinh Lam
Vinh Lam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11963457Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.Type: GrantFiled: December 12, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng, Vinh Lam, Yi Yang
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Publication number: 20230371398Abstract: A magnetic tunneling junction (MTJ) structure is described. The MJT structure includes a stress modulating layer on a first electrode layer, where a material of the stress modulating layer is different from a material of the first electrode layer. The MJT structure further includes a MTJ material stack on the stress modulating layer. And the MJT structure further includes a second electrode layer on the MTJ material stack. The stress modulating layer reduces crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Patent number: 11785864Abstract: A magnetic tunneling junction (MTJ) structure is described. The MJT structure includes a stress modulating layer on a first electrode layer, where a material of the stress modulating layer is different from a material of the first electrode layer. The MJT structure further includes a MTJ material stack on the stress modulating layer. And the MJT structure further includes a second electrode layer on the MTJ material stack. The stress modulating layer reduces crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: GrantFiled: August 10, 2022Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Publication number: 20230107977Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.Type: ApplicationFiled: December 12, 2022Publication date: April 6, 2023Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng, Vinh Lam, Yi Yang
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Patent number: 11527711Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.Type: GrantFiled: March 8, 2021Date of Patent: December 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng, Vinh Lam, Yi Yang
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Publication number: 20220384713Abstract: A magnetic tunneling junction (MTJ) structure is described. The MJT structure includes a stress modulating layer on a first electrode layer, where a material of the stress modulating layer is different from a material of the first electrode layer. The MJT structure further includes a MTJ material stack on the stress modulating layer. And the MJT structure further includes a second electrode layer on the MTJ material stack. The stress modulating layer reduces crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Inventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Patent number: 11430945Abstract: A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: GrantFiled: November 11, 2019Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Publication number: 20220236304Abstract: Vertical probe arrays having angled guide plates are provided. With this configuration, the probes can be straight conductors (when mechanically undeformed) and the mechanical bias provided by the angled guide plates can ensure the probes have a well-defined deformation when the probe array make contact to the device under test. This allows the use of straight conductors as probes without suffering from probe shorting and mechanical interference caused by straight probes buckling in unpredictable directions when vertically compressed.Type: ApplicationFiled: January 28, 2022Publication date: July 28, 2022Inventors: Sterling Tadashi Collins, Jason William Cosman, Lich Thanh Tran, Vinh-Lam Olivier Buu
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Publication number: 20210193915Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.Type: ApplicationFiled: March 8, 2021Publication date: June 24, 2021Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng, Vinh Lam, Yi Yang
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Patent number: 10944049Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.Type: GrantFiled: November 13, 2017Date of Patent: March 9, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng, Vinh Lam, Yi Yang
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Patent number: 10623330Abstract: A distributed bandwidth allocation system a distributed bandwidth limiter, a first throttler, and a second throttler. The distributed bandwidth limiter receives first usage data for a first entity and usage data for a second entity. Based on the first usage data, second usage data, and a total bandwidth allocation, the distributed bandwidth limiter determines a first bandwidth allocation specifying bandwidth available for network traffic for the first entity and a second bandwidth allocation that specifies bandwidth available for network traffic for the second entity, wherein a sum of the first bandwidth allocation and the second bandwidth allocation does not exceed the total bandwidth allocation. The first bandwidth allocation and the second bandwidth allocation are provided to respective throttlers than manage traffic for the first and second entities.Type: GrantFiled: August 25, 2017Date of Patent: April 14, 2020Assignee: Google LLCInventors: Nandita Dukkipati, Vinh The Lam, Kirill Mendelev, Li Shi
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Patent number: 10596893Abstract: A vehicle transmission apparatus, for an automotive vehicle that has a longitudinal axis and a lateral axis, is contained within an engine compartment of the vehicle and includes a vehicle transmission and a roll initiator operable to rotate the vehicle transmission about the lateral axis of the vehicle. The roll initiator is attached to vehicle transmission and has a projecting portion that is arranged to engage with a structure within the engine compartment.Type: GrantFiled: January 10, 2019Date of Patent: March 24, 2020Assignee: Ford Global Technologies, LLCInventors: Michael Spurling, Daniel Meckenstock, Marius Sawatzki, Simon Jesse, Herbert Gonska, Dongpeng Kou, Wayne Vinh Lam
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Publication number: 20200075844Abstract: A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: ApplicationFiled: November 11, 2019Publication date: March 5, 2020Inventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Patent number: 10475987Abstract: A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: GrantFiled: May 1, 2018Date of Patent: November 12, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Publication number: 20190341542Abstract: A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.Type: ApplicationFiled: May 1, 2018Publication date: November 7, 2019Inventors: Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar, Zhongjian Teng
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Publication number: 20190210444Abstract: The present disclosure is directed toward a vehicle transmission apparatus for an automotive vehicle having a longitudinal axis and a lateral axis. The apparatus is contained within an engine compartment of the vehicle, and includes a vehicle transmission and a roll initiator operable to rotate the vehicle transmission about the lateral axis of the vehicle. The roll initiator is attached to vehicle transmission and has a projecting portion that is arranged to engage with a structure within the engine compartment.Type: ApplicationFiled: January 10, 2019Publication date: July 11, 2019Applicant: Ford Global Technologies, LLCInventors: Michael Spurling, Daniel Meckenstock, Marius Sawatzki, Simon Jesse, Herbert Gonska, Dongpeng Kou, Wayne Vinh Lam
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Publication number: 20190148630Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.Type: ApplicationFiled: November 13, 2017Publication date: May 16, 2019Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng, Vinh Lam, Yi Yang
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Publication number: 20180091436Abstract: A distributed bandwidth allocation system a distributed bandwidth limiter, a first throttler, and a second throttler. The distributed bandwidth limiter receives first usage data for a first entity and usage data for a second entity. Based on the first usage data, second usage data, and a total bandwidth allocation, the distributed bandwidth limiter determines a first bandwidth allocation specifying bandwidth available for network traffic for the first entity and a second bandwidth allocation that specifies bandwidth available for network traffic for the second entity, wherein a sum of the first bandwidth allocation and the second bandwidth allocation does not exceed the total bandwidth allocation. The first bandwidth allocation and the second bandwidth allocation are provided to respective throttlers than manage traffic for the first and second entities.Type: ApplicationFiled: August 25, 2017Publication date: March 29, 2018Inventors: Nandita Dukkipati, Vinh The Lam, Kirill Mendelev, Li Shi
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Patent number: 8524511Abstract: A CMOS device is provided in a substrate. A magnetic tunnel junction (MTJ) is provided over the CMOS device and connected to the CMOS device by a metal ring contact wherein a dielectric or other filling material forms the center of the metal ring contact and wherein a bottom of the metal ring contact underlying said filling material is metal.Type: GrantFiled: August 10, 2012Date of Patent: September 3, 2013Assignee: Headway Technologies, Inc.Inventors: Tom Zhong, Vinh Lam, Zhongjian Teng
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Patent number: D819208Type: GrantFiled: August 12, 2016Date of Patent: May 29, 2018Assignee: W.S. INDUSTRIES, INC.Inventor: Vinh Lam