Patents by Inventor Vipin Joshi

Vipin Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltage
    Patent number: 11031493
    Abstract: The present invention proposes a set of impurity doping configurations for GaN buffer in an AlGaN/GaN HEMT device to improve breakdown characteristics of the device. The breakdown characteristics depend on a unique mix of donor and acceptor traps and using carbon as a dopant increases both donor and acceptor trap concentrations, resulting in a trade-off in breakdown voltage improvement and device performance. A modified silicon and carbon co-doping is proposed, which enables independent control over donor and acceptor trap concentrations in the buffer, thus potentially improving breakdown characteristics of the device without adversely affecting the device performance.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: June 8, 2021
    Inventors: Mayank Shrivastava, Vipin Joshi
  • DOPING AND TRAP PROFILE ENGINEERING IN GaN BUFFER TO MAXIMIZE AlGaN/GaN HEMT EPI STACK BREAKDOWN VOLTAGE
    Publication number: 20190371930
    Abstract: The present invention proposes a set of impurity doping configurations for GaN buffer in an AlGaN/GaN HEMT device to improve breakdown characteristics of the device. The breakdown characteristics depend on a unique mix of donor and acceptor traps and using carbon as a dopant increases both donor and acceptor trap concentrations, resulting in a trade-off in breakdown voltage improvement and device performance. A modified silicon and carbon co-doping is proposed, which enables independent control over donor and acceptor trap concentrations in the buffer, thus potentially improving breakdown characteristics of the device without adversely affecting the device performance.
    Type: Application
    Filed: June 4, 2019
    Publication date: December 5, 2019
    Applicant: Indian Institute of Science
    Inventors: Mayank SHRIVASTAVA, Vipin Joshi