Patents by Inventor Virginia D. Wheeler
Virginia D. Wheeler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230245901Abstract: A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.Type: ApplicationFiled: February 23, 2023Publication date: August 3, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marc Currie, Virginia D. Wheeler
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Patent number: 11631593Abstract: A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.Type: GrantFiled: March 29, 2022Date of Patent: April 18, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marc Currie, Virginia D. Wheeler
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Publication number: 20220270891Abstract: A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.Type: ApplicationFiled: March 29, 2022Publication date: August 25, 2022Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marc Currie, Virginia D. Wheeler
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Patent number: 11322366Abstract: A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.Type: GrantFiled: January 26, 2021Date of Patent: May 3, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marc Currie, Virginia D. Wheeler
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Patent number: 11227943Abstract: A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrO2 gate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.Type: GrantFiled: June 25, 2018Date of Patent: January 18, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Travis J. Anderson, Virginia D. Wheeler, Karl D. Hobart, Francis J. Kub
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Patent number: 11226503Abstract: A tunable spectral filter comprising a phase change material is incorporated into a multilayered dielectric structure. The dielectric permittivity, and thus the filter properties, of the structure can be modified by producing a change in the phase change material, e.g., causing a metal-insulator transition. By controllably causing such a change in the dielectric permittivity of the phase change material, the spectral transmittance and reflectance of the structure, and thus its filter properties, can be modified to provide a predetermined transmittance or reflectance of electromagnetic radiation incident on the structure. In preferred embodiments, the phase change material layer is a vanadium dioxide (VO2) film formed by atomic layer deposition (ALD).Type: GrantFiled: December 13, 2019Date of Patent: January 18, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marc Currie, Virginia D. Wheeler, Guy Beadie
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Publication number: 20210181542Abstract: A tunable spectral filter comprising a phase change material is incorporated into a multilayered dielectric structure. The dielectric permittivity, and thus the filter properties, of the structure can be modified by producing a change in the phase change material, e.g., causing a metal-insulator transition. By controllably causing such a change in the dielectric permittivity of the phase change material, the spectral transmittance and reflectance of the structure, and thus its filter properties, can be modified to provide a predetermined transmittance or reflectance of electromagnetic radiation incident on the structure. In preferred embodiments, the phase change material layer is a vanadium dioxide (VO2) film formed by atomic layer deposition (ALD).Type: ApplicationFiled: December 13, 2019Publication date: June 17, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marc Currie, Virginia D. Wheeler, Guy Beadie
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Patent number: 10266963Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.Type: GrantFiled: January 30, 2014Date of Patent: April 23, 2019Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
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Patent number: 10256094Abstract: A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.Type: GrantFiled: March 11, 2014Date of Patent: April 9, 2019Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
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Patent number: 10256090Abstract: A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.Type: GrantFiled: March 11, 2014Date of Patent: April 9, 2019Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
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Publication number: 20180374944Abstract: A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrO2 gate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.Type: ApplicationFiled: June 25, 2018Publication date: December 27, 2018Inventors: Travis J. Anderson, Virginia D. Wheeler, Karl D. Hobart, Francis J. Kub
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Patent number: 10002958Abstract: Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present disclosure use a “diamond last” process using thermally stable metal nitride gate electrodes to enable thicker heat spreading films and facilitate process integration. In an embodiment, the “diamond last” process with high thermal conductivity diamond is enabled by the integration of thermally stable metal-nitride gate electrodes.Type: GrantFiled: June 8, 2017Date of Patent: June 19, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Virginia D. Wheeler, Andrew D. Koehler, Karl D. Hobart
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Patent number: 9995858Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: GrantFiled: December 8, 2017Date of Patent: June 12, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Patent number: 9991354Abstract: Systems and methods are provided that enable the production of semiconductor devices having a metal nitride layer in direct contact with a semiconductor layer to form a Schottky diode, such as a TiN gate on an AlGaN/GaN high electron mobility transistor (HEMT). Metal nitrides offer exceptional thermal stability and a lower diffusion coefficient. Technology enabled by embodiments of the present disclosure improves the reliability of GaN-based microwave power transistors.Type: GrantFiled: May 16, 2017Date of Patent: June 5, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Travis J. Anderson, Virginia D. Wheeler, David Shahin, Andrew D. Koehler, Karl D. Hobart, Francis J. Kub, Marko J. Tadjer
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Patent number: 9971071Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: GrantFiled: October 26, 2017Date of Patent: May 15, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Publication number: 20180100955Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: ApplicationFiled: December 8, 2017Publication date: April 12, 2018Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-Paul Maria
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Publication number: 20180045861Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: ApplicationFiled: October 26, 2017Publication date: February 15, 2018Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Patent number: 9870839Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: GrantFiled: January 27, 2017Date of Patent: January 16, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Publication number: 20170358670Abstract: Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present disclosure use a “diamond last” process using thermally stable metal nitride gate electrodes to enable thicker heat spreading films and facilitate process integration. In an embodiment, the “diamond last” process with high thermal conductivity diamond is enabled by the integration of thermally stable metal-nitride gate electrodes.Type: ApplicationFiled: June 8, 2017Publication date: December 14, 2017Inventors: Francis J. Kub, Travis J. Anderson, Virginia D. Wheeler, Andrew D. Koehler, Karl D. Hobart
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Publication number: 20170330950Abstract: Systems and methods are provided that enable the production of semiconductor devices having a metal nitride layer in direct contact with a semiconductor layer to form a Schottky diode, such as a TiN gate on an AlGaN/GaN high electron mobility transistor (HEMT). Metal nitrides offer exceptional thermal stability and a lower diffusion coefficient. Technology enabled by embodiments of the present disclosure improves the reliability of GaN-based microwave power transistors.Type: ApplicationFiled: May 16, 2017Publication date: November 16, 2017Inventors: Travis J. Anderson, Virginia D. Wheeler, David Shahin, Andrew D. Koehler, Karl D. Hobart, Francis J. Kub, Marko J. Tadjer