Abstract: A method is used in recovering duplicate blocks in file systems. A duplicate file system block is detected in a file system. The duplicate file system block is referred by a first inode associated with a first file of the file system and a second inode associated with a second file of the file system. Metadata of the duplicate file system block is evaluated. Based on the evaluation, a set of inodes in the file system is determined. Each inode of the set of inodes refer to the duplicate file system block. Based on the determination, the set of inodes is updated.

Abstract: A method is used in recovering file system blocks of file systems. A first read error is encountered upon reading a file system block of a file system. The file system block includes a first set of chunks. A second read error is encountered upon reading a duplicate copy of the file system block. The duplicate copy of the file system block includes a second set of chunks. Each chunk of the first and second sets of chunks is evaluated. Based on the evaluation, the file system block is recovered.

Abstract: A method is used in analyzing mapping objects of file systems. Each mapping object of a set of mapping objects of files of a file system is analyzed by iterating over the set of mapping objects. A file is associated with a first mapping object of the set of mapping objects and a snapshot copy of the file is associated with a second mapping object of the set of mapping objects. The second mapping object shares a subset of a set of storage objects associated with the first mapping object. Information for each storage object of the set of storage objects associated with each mapping object of the set of mapping objects is stored. Based on the stored information, each storage object of the set of storage objects associated with each mapping object of the set of mapping objects is processed.

Abstract: A method is used in recovering files in data storage systems. A set of file system blocks of a file of a file system is identified. The set of file system blocks are associated with a portion of an inode of the file of the file system. Mapping information associated with the portion of the inode is missing references to the set of file system blocks. Metadata of each file system block of the set of file system blocks is evaluated. Based on the evaluation, the portion of the inode of the file is recovered by updating mapping information associated with the portion of the inode.

Abstract: Various embodiments include systems for controlling the flow of main steam from a high-pressure (HP) turbine to a turbine packing. In some cases, a system is disclosed including: a high pressure (HP) turbine including a plurality of stages, the plurality of stages including an early stage, a middle stage and a later stage; an intermediate pressure (IP) turbine operably connected with the HP turbine; a packing separating the HP turbine and the IP turbine; a main conduit fluidly connecting the middle stage of the HP turbine and the packing, the main conduit including a main valve; and a bypass conduit fluidly connected to the main conduit and bypassing the main valve, the bypass conduit including: a blocking valve; and an opening between the blocking valve and a downstream connection with the main conduit.

Abstract: Methods of forming dielectric films comprising Si, C, O and H atoms (SiCOH) or Si, C, N and H atoms (SiCHN) that have improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties are provided. Electronic structures including the above materials are also included herein.

Abstract: A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion battier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

Abstract: The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.

Abstract: A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided.

Abstract: A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Abstract: A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.