Abstract: In one aspect, a substrate chemical mechanical polishing (CMP) method for substrates is disclosed. The CMP method includes providing a substrate having a surface of silicon and copper such as through silicon via regions containing copper, and polishing the surface with a slurry containing very small silicon nanoparticles (e.g., having an average diameter less than 8 nanometers). CMP systems and slurries for CMP are provided, as are numerous other aspects.

Abstract: Methods for electrodeposition of copper on a noble metal layer of a work piece are provided. An exemplary method includes exposing the noble metal layer to an electrodeposition composition. The electrodeposition composition comprises a copper salt, a suppressor, an accelerator and an electrolyte. The electrodeposition of copper on a surface of the noble metal layer is initiated by application of a predetermined current density to the work piece. The electrodeposition of copper is terminated upon the occurrence of a predetermined event.

Abstract: A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

Abstract: A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

Abstract: Methods and compositions are provided for the chemical mechanical planarization of ruthenium. The method includes polishing the ruthenium layer using a low contact pressure and exposing the ruthenium layer to a planarization composition while polishing. The planarization composition comprises a dispersing medium and a plurality of abrasive particles. The method further includes removing the ruthenium of the ruthenium layer as a ruthenium hydroxide if the pH of the composition is in the range of from about 8 to about 12. The planarization composition may further comprise an oxidizing agent, with the ruthenium removed as a ruthenium hydroxide if the pH of the composition is in the range of from about 2 to about 14. The planarization composition may further comprise a complexing agent, with the ruthenium transformed into an ionic state and removed as a ruthenium complex if the pH of the composition is no greater than about 2.5.