Abstract: A method of fabricating a micro-device having micro-features on glass is presented. The method includes the steps of preparing a first glass substrate, fabricating a metallic pattern on the first glass substrate, preparing a second glass substrate and providing one or more apertures on the second glass substrate, heating the first glass substrate and the second glass substrate with a controlled temperature raise, bonding the first glass substrate and the second glass substrate by applying pressure to form a bonded substrate, wherein the metallic pattern is embedded within the bonded substrate, cooling the bonded substrate with a controlled temperature drop and thereafter maintaining the bonded substrate at a temperature suitable for etching, etching the metallic pattern within the bonded substrate, wherein an etchant has access to the metallic pattern via the apertures, forming a void within the bonded substrate, wherein the void comprises micro-features.

Abstract: A method of fabricating a micro-device having micro-features on glass is presented. The method includes the steps of preparing a first glass substrate, fabricating a metallic pattern on the first glass substrate, preparing a second glass substrate and providing one or more apertures on the second glass substrate, heating the first glass substrate and the second glass substrate with a controlled temperature raise, bonding the first glass substrate and the second glass substrate by applying pressure to form a bonded substrate, wherein the metallic pattern is embedded within the bonded substrate, cooling the bonded substrate with a controlled temperature drop and thereafter maintaining the bonded substrate at a temperature suitable for etching, etching the metallic pattern within the bonded substrate, wherein an etchant has access to the metallic pattern via the apertures, forming a void within the bonded substrate, wherein the void comprises micro-features.

Abstract: A method for packaging a semiconductor device includes forming through holes (12) in a base substrate (10) and depositing a conductive material (14) on a first side (16) of the base substrate (10) to form a conductive layer (18) such that the conductive material (14) fills the through holes (12). The conductive layer (18) is patterned and etched to form interconnect traces and pads (22). Conductive supports (24) are formed on the pads (22) such that the conductive supports (24) extend through respective ones of the through holes (12).

Abstract: A method of forming a semiconductor package (32) includes etching a conductive sheet (10) to form a first interconnection system (12). An integrated circuit (IC) die (22) is placed on and electrically connected to the first interconnection system (12). Next, a molding operation is performed to encapsulate the IC die (22), the electrical connections (24, 26) and at least a portion of the first interconnection system (12). A portion (20) of the conductive sheet (10) is then removed to expose a surface (30) of the first interconnection system (12). A second interconnection system (34) then is formed over the exposed surface (30) of the first interconnection system (12).

Abstract: A method for packaging a semiconductor device includes forming through holes (12) in a base substrate (10) and depositing a conductive material (14) on a first side (16) of the base substrate (10) to form a conductive layer (18) such that the conductive material (14) fills the through holes (12). The conductive layer (18) is patterned and etched to form interconnect traces and pads (22). Conductive supports (24) are formed on the pads (22) such that the conductive supports (24) extend through respective ones of the through holes (12).

Abstract: A method of making a reinforced semiconductor package includes forming a semiconductor interconnect tablet (24). Formation of the tablet includes providing a plurality of conductive metal tabs (10), positioning a first end (12) of the tabs (10) in a first section of a mold chase (14), positioning a second section of the mold chase (16) over a second end (18) of the tabs (10), such that the tabs (10) are anchored between the first and second sections (14, 16) of the mold chase, loading the first and second sections (14, 16) of the mold chase into a molding system (20) and performing a molding operation such that a plastic mold compound (22) is formed around the metal tabs (10) and an interconnect tablet (24) is formed. Then the first and second sections (14, 16) of the mold chase are removed from the molding system (20) and the interconnect tablet (24) is removed from the first and second sections (14, 16) of the mold chase.

Abstract: A method of making a reinforced semiconductor package includes forming a semiconductor interconnect tablet (24). Formation of the tablet includes providing a plurality of conductive metal tabs (10), positioning a first end (12) of the tabs (10) in a first section of a mold chase (14), positioning a second section of the mold chase (16) over a second end (18) of the tabs (10), such that the tabs (10) are anchored between the first and second sections (14, 16) of the mold chase, loading the first and second sections (14, 16) of the mold chase into a molding system (20) and performing a molding operation such that a plastic mold compound (22) is formed around the metal tabs (10) and an interconnect tablet (24) is formed. Then the first and second sections (14, 16) of the mold chase are removed from the molding system (20) and the interconnect tablet (24) is removed from the first and second sections (14, 16) of the mold chase.