Abstract: A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source.

Abstract: A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the sublimation of stable dimer parylene material, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and for the optional blending of the resulting gaseous parylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the parylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber.

Abstract: A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source.