Patents by Inventor Vitali Savuskan

Vitali Savuskan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9759601
    Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muzzle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muzzle flash.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: September 12, 2017
    Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD.
    Inventors: Yael Nemirovsky, Tomer Merhav, Vitali Savuskan, Amikam Nemirovsky
  • Publication number: 20140312209
    Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muffle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muffle flash.
    Type: Application
    Filed: April 10, 2014
    Publication date: October 23, 2014
    Inventors: Yael NEMIROVSKY, Tomer MERHAV, Vitali SAVUSKAN, Amikam NEMIROVSKY
  • Patent number: 8779543
    Abstract: A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.
    Type: Grant
    Filed: September 16, 2012
    Date of Patent: July 15, 2014
    Assignee: Technion Research and Development Foundation Ltd.
    Inventors: Yael Nemirovsky, Vitali Savuskan, Sharon Bar-Lev Shefi, Igor Brouk, Gil Visokolov, Amos Fenigstein, Tomer Leitner
  • Publication number: 20130099091
    Abstract: A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.
    Type: Application
    Filed: September 16, 2012
    Publication date: April 25, 2013
    Inventors: Yael Nemirovsky, Vitali Savuskan, Sharon Bar-Lev Shefi, Igor Brouk, Gil Visokolov, Amos Fenigstein, Tomer Leitner