Patents by Inventor Vithal Revankar

Vithal Revankar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100009843
    Abstract: Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.
    Type: Application
    Filed: September 21, 2009
    Publication date: January 14, 2010
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Vithal Revankar, Jameel Ibrahim
  • Publication number: 20100009844
    Abstract: Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.
    Type: Application
    Filed: September 21, 2009
    Publication date: January 14, 2010
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Vithal Revankar, Jameel Ibrahim
  • Publication number: 20090324479
    Abstract: Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.
    Type: Application
    Filed: June 29, 2009
    Publication date: December 31, 2009
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Milind S. Kulkarni, Puneet Gupta, Balaji Devulapalli, Jameel Ibrahim, Vithal Revankar, Kwasi Foli
  • Publication number: 20090324819
    Abstract: Processes for producing polycrystalline silicon include contacting silicon particles with a thermally decomposable silicon compound in a reaction chamber. A portion of the silicon decomposable compound decomposes to produce silicon dust which is discharged from and reintroduced into the reaction chamber. The discharged silicon dust agglomerates with the silicon particles.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 31, 2009
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Milind S. Kulkarni, Steven L. Kimbel, Jameel Ibrahim, Vithal Revankar
  • Publication number: 20090092530
    Abstract: The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport.
    Type: Application
    Filed: September 2, 2008
    Publication date: April 9, 2009
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Vithal Revankar, Jameel Ibrahim
  • Publication number: 20090092534
    Abstract: Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.
    Type: Application
    Filed: September 11, 2008
    Publication date: April 9, 2009
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Vithal Revankar, Jameel Ibrahim
  • Patent number: 5693305
    Abstract: A method for making aluminum nitride whiskers comprising reacting a reactant bed of aluminum, alumina, ammonium chloride, with a metal-containing carbon catalyst in the presence of a nitrogen gas flow, such that a direct nitridation reaction, a carbothermal reaction and a transport species reaction occur concurrently.
    Type: Grant
    Filed: October 19, 1995
    Date of Patent: December 2, 1997
    Assignee: Advanced Refractory Technologies, Inc.
    Inventors: Vithal Revankar, Arvind Goel
  • Patent number: 5665326
    Abstract: A method for making titanium nitride whiskers comprising reacting titanium in the presence of nitrogen in a direct nitridation reaction, concurrently reacting titania in the presence of nitrogen in a carbothermal nitridation reaction, optionally in the presence of a transport species reaction under conditions necessary to make titanium nitride whiskers.
    Type: Grant
    Filed: November 13, 1995
    Date of Patent: September 9, 1997
    Assignee: Advanced Refractory Technologies, Inc.
    Inventors: Arvind Goel, Vithal Revankar