Abstract: An example of a memory device may comprise NAND media with a plurality of decks, and circuitry coupled to the NAND media to control access to a superblock of memory cells aligned along a pillar of the NAND media, wherein the superblock includes at least a first block that corresponds to memory cells aligned along the pillar in a first deck of the plurality of decks and a second block that corresponds to memory cells aligned along the pillar in a second deck of the plurality of decks, configure the NAND media in a first program mode for the first block of the superblock, and configure the NAND media in a second program mode for the second block of the superblock. Other examples are disclosed and claimed.

Abstract: A storage device includes a storage array with multiple planes organized as plane groups, where the planes of a plane group receive and process commands in parallel. The storage device includes a storage controller that receives a command from a host controller. In response to receipt of the command the storage controller provides ready information for all planes to the host controller. The multiple planes can optionally have independent multiplane read operation (IMPRO). Each plane group can have a first plane and a second plane, and the storage controller can optionally read data from the first plane of a plane group in response to a virtual ready signal for the first plane, before the second plane of the plane group is ready.

Abstract: A storage device includes a storage array with multiple planes organized as plane groups, where the planes of a plane group receive and process commands in parallel. The storage device includes a storage controller that receives a command from a host controller. In response to receipt of the command the storage controller provides ready information for all planes to the host controller. The multiple planes can optionally have independent multiplane read operation (IMPRO). Each plane group can have a first plane and a second plane, and the storage controller can optionally read data from the first plane of a plane group in response to a virtual ready signal for the first plane, before the second plane of the plane group is ready.

Abstract: The size of page map memory in a NAND flash device used to store page related information is decreased by embedding page type in a row address. The row address is received by the NAND flash device from the host on the data bus in a six-cycle sequence. The received row address is used to decode a physical page address received during the row address cycle to obtain a word line and a block segment number for a block segment in the word line in the NAND flash array. A same block segment number is used for each page type in the block segment.

Abstract: Systems, apparatuses and methods may provide for technology that generates address information for a plurality of planes in NAND memory, excludes column information from the address information, and sends a read command sequence to the NAND memory, wherein the read command sequence includes the address information. In one example, the technology also excludes plane confirm commands and busy cycles from the read command sequence.

Abstract: Systems, apparatuses and methods may provide for technology that sends a first command to a NAND die, sends first address information to the NAND die, and sends a second command to the NAND die, wherein the first command and the second command define a first command sequence and wherein the first address information signal a beginning of a first asynchronous read request from a first plurality of planes. In one example, the technology also sends a second command sequence and second address information to the NAND die wherein the second command sequence signals an end of the first asynchronous read request.

Abstract: A memory device that has been programmed to store a single bit or multiple bits can perform a determination of a number of threshold voltages in one or more threshold voltage level regions. Based on the number of threshold voltages meeting or exceeding a threshold level, a page of bits can be read and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be stored in the cells together with other bits stored in the cells and a provided additional page of bits. However, if the bit error rate of the page of bits is at or above the threshold rate, then the bit or bits stored in the cells can be error corrected and stored together with a provided additional page of bits.

Abstract: An embodiment of an electronic apparatus may include one or more substrates, and logic coupled to the one or more substrates, the logic to control access to a persistent storage media based on a block and sub-block access structure, store a data structure in the persistent storage media to track read fails at a sub-block granularity for a word-line for every block, and update the data structure in response to a read fail on a block to indicate a failed sub-block that corresponds to the read fail for a word-line for the block. Other embodiments are disclosed and claimed.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: Various embodiments, disclosed herein, can include apparatus and methods to perform a one check failure byte (CFBYTE) scheme in programming of a memory device. In programming memory cells in which each memory cell can store multiple bits, the multiple bits being a n-tuple of bits of a set of n-tuples of bits with each n-tuple of the set associated with a level of a set of levels of threshold voltages for the memory cells. Verification of a program algorithm can be structured based on a programming algorithm that proceeds in a progressive manner by placing a threshold voltage of one level/distribution at a time. The routine of this progression can be used to perform just one failure byte check for that specific target distribution only, thus eliminating the need to check failure byte for all subsequent target distribution during every stage of program algorithm. Additional apparatus, systems, and methods are disclosed.

Abstract: A memory device that has been programmed to store a single bit or multiple bits can perform a determination of a number of threshold voltages in one or more threshold voltage level regions. Based on the number of threshold voltages meeting or exceeding a threshold level, a page of bits can be read and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be stored in the cells together with other bits stored in the cells and a provided additional page of bits. However, if the bit error rate of the page of bits is at or above the threshold rate, then the bit or bits stored in the cells can be error corrected and stored together with a provided additional page of bits.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: A system for facilitating multiple concurrent page reads in a memory array is provided. Memory cells that have multiple programming states (e.g., store multiple bits per cell) rely on various control gate and wordline voltages levels to read the memory cells. Therefore, to concurrently read multiple pages of memory cells, where each page includes one or more different programming levels, a memory controller includes first wordline control logic that includes a first voltage regulator and includes second wordline control logic that includes a second voltage regulator, according to one embodiment. The two voltage regulators enable the memory controller to concurrently address and access multiple pages of memory at different programming levels, in response to memory read requests, according to one embodiment.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: Various embodiments, disclosed herein, can include apparatus and methods to perform a one check failure byte (CFBYTE) scheme in programming of a memory device. In programming memory cells in which each memory cell can store multiple bits, the multiple bits being a n-tuple of bits of a set of n-tuples of bits with each n-tuple of the set associated with a level of a set of levels of threshold voltages for the memory cells. Verification of a program algorithm can be structured based on a programming algorithm that proceeds in a progressive manner by placing a threshold voltage of one level/distribution at a time. The routine of this progression can be used to perform just one failure byte check for that specific target distribution only, thus eliminating the need to check failure byte for all subsequent target distribution during every stage of program algorithm. Additional apparatus, systems, and methods are disclosed.

Abstract: A system for facilitating multiple concurrent page reads in a memory array is provided. Memory cells that have multiple programming states (e.g., store multiple bits per cell) rely on various control gate and wordline voltages levels to read the memory cells. Therefore, to concurrently read multiple pages of memory cells, where each page includes one or more different programming levels, a memory controller includes first wordline control logic that includes a first voltage regulator and includes second wordline control logic that includes a second voltage regulator, according to one embodiment. The two voltage regulators enable the memory controller to concurrently address and access multiple pages of memory at different programming levels, in response to memory read requests, according to one embodiment.

Abstract: Various embodiments, disclosed herein, can include apparatus and methods to perform a one check failure byte (CFBYTE) scheme in programming of a memory device. In programming memory cells in which each memory cell can store multiple bits, the multiple bits being a n-tuple of bits of a set of n-tuples of bits with each n-tuple of the set associated with a level of a set of levels of threshold voltages for the memory cells. Verification of a program algorithm can be structured based on a programming algorithm that proceeds in a progressive manner by placing a threshold voltage of one level/distribution at a time. The routine of this progression can be used to perform just one failure byte check for that specific target distribution only, thus eliminating the need to check failure byte for all subsequent target distribution during every stage of program algorithm. Additional apparatus, systems, and methods are disclosed.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: A method performed by a non volatile memory is described. The method includes receiving a first command from a controller to perform an operation. The method also includes receiving a second command from the controller to perform a read operation, where, the controller does not send a third command to suspend the operation between the first and second commands.