Abstract: The present invention relates to a reactor (1) for growing crystals of a material, in particular of silicon carbide or a third-group nitride; it comprises a chamber (2) divided into a first zone (21) and a second zone (22), said division being accomplished through a dividing wall (3) having at least one opening (31) which puts said first and second zones (21,22) in communication with each other, injection means (41,42) adapted to supply said first zone (21) with at least one precursor gas of said material, exhaust means (5) adapted to discharge exhaust gases from said second zone (22), support means (6) located in said second zone (22) and adapted to support a growing crystal, and heating means (71,72) adapted to keep said first and second zones (21,22) at a temperature between 2000° C. and 2600° C.

Abstract: The present invention relates to a system for supporting and rotating a susceptor within the treatment chamber of a wafer treatment apparatus comprising a support member (2) placed inside the treatment chamber and capable of supporting a susceptor (3), means (4) capable of lifting the support member (2) via a lifting gas flow, and means (5) capable of rotating the support member (2) via a rotation gas flow.

Abstract: The present invention relates to a device (1) for introducing reaction gases into a reaction chamber of an epitaxial reactor; the device (1) comprises a gas supply pipe (2) and a cooling member (3) situated at one end of the supply pipe (2) and able to cool the supply pipe (2) and thereby the gas flowing inside it.

Abstract: A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (ZI) of the chambe, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for beating the chamber (1) to a temperature greater than 1800° C.?; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z2).

Abstract: A device for handling substrates, used in an epitaxial apparatus or reactor (20) for chemical vapour deposition (CVD) onto the said substrates, comprises an internal robot (30) provided with means (60) for gripping and transporting substrates, which are in the form of semiconductor slices (24), in order to transfer them from cassettes (38, 40) containing the semiconductor slices (24) to be processed, the gripping and transportation means (60) having precisely the task of transporting the slices (24), which are present in a purging chamber (34) and supplied from a cassette (38) for storage of the said slices (24), from the purging chamber (34) into a reaction chamber (22) of the epitaxial reactor (20) and, more particularly, into seats (28a-e) formed on a flat disk-shaped susceptor (26) which is present in the reaction chamber (22) of the epitaxial reactor (20) and vice versa, from the reaction chamber (22) again passing through the purging chamber (34), to the cassettes (38, 40).

Abstract: A reactor for chemical vapor deposition of epitaxial layers on crystalline substrates uses a medium frequency heating system, the power for the heating being provided by a multi-turn coil, inducing electrical currents in a susceptor of electrically conductive material, such as graphite, housed in a transparent bell jar. The internal sides of the turns of the coil are optically finished to reflect back heat to the susceptor irradiated therefrom during operation. Heating is controlled by substracting or adding reactive currents from or to different turns of the coil and through properly shaping the walls of the susceptor in order to control temperature gradients therein.