Abstract: A wafer level package device and method are disclosed that include a warpage compensation metal adhered to a backside of a semiconductor wafer for minimizing warpage of the semiconductor wafer, where multiple metal features have been formed on the device side of the semiconductor substrate. The warpage compensation metal may include a copper film.

Abstract: Semiconductor devices are described that employ techniques configured to control adhesive application between a substrate and a die. In an implementation, a sacrificial layer is provided on a top surface of the die to protect the surface, and bonds pads thereon, from spill-over of the adhesive. The sacrificial layer and spill-over adhesive are subsequently removed from the die and/or chip carrier. In an implementation, the die includes a die attach film (DAF) on a bottom surface of the die for adhering the die to the cavity of the substrate. The die is applied to the cavity with heat and pressure to cause a portion of the die attach film (DAF) to flow from the bottom surface of the die to a sloped surface of the substrate cavity.

Abstract: Semiconductor devices are described that have bump assemblies configured to furnish shock absorber functionality. In an implementation, a wafer-levelchip-scale package devices include an integrated circuit chip having an array of bump assemblies disposed over the integrated circuit chip. The array of bump assemblies comprises a plurality of first bump assemblies that include solder bumps composed at least substantially of a solder composition (i.e., solder bumps that do not include a core). The array further comprises a plurality of second bump assemblies that includes a solder bump having a core configured to furnish shock absorber functionality to the integrated circuit chip.

Abstract: Semiconductor devices are described that employ techniques configured to control adhesive application between a substrate and a die. In an implementation, a sacrificial layer is provided on a top surface of the die to protect the surface, and bonds pads thereon, from spill-over of the adhesive. The sacrificial layer and spill-over adhesive are subsequently removed from the die and/or chip carrier. In an implementation, the die includes a die attach film (DAF) on a bottom surface of the die for adhering the die to the cavity of the substrate. The die is applied to the cavity with heat and pressure to cause a portion of the die attach film (DAF) to flow from the bottom surface of the die to a sloped surface of the substrate cavity.

Abstract: A wafer-level package device and techniques for fabricating the device are described that include embedding a silicon chip onto an active device wafer or a passive device wafer, where the embedded silicon chip is a thin chip (e.g., <50 ?m). In implementations, the wafer-level package device that employs the techniques of the present disclosure includes an active device wafer, a thin integrated circuit chip, an encapsulation structure covering at least a portion of the active device wafer and the thin integrated circuit chip, a redistribution layer structure, and at least one solder bump for providing electrical interconnectivity. Once the wafer is singulated into semiconductor devices, each semiconductor device including the embedded thin integrated circuit chip may be mounted to a printed circuit board.

Abstract: Semiconductor devices are described that have bump assemblies configured to furnish shock absorber functionality. In an implementation, a wafer-levelchip-scale package devices include an integrated circuit chip having an array of bump assemblies disposed over the integrated circuit chip. The array of bump assemblies comprises a plurality of first bump assemblies that include solder bumps composed at least substantially of a solder composition (i.e., solder bumps that do not include a core). The array further comprises a plurality of second bump assemblies that includes a solder bump having a core configured to furnish shock absorber functionality to the integrated circuit chip.

Abstract: Semiconductor devices are described that include a semiconductor device having multiple, stacked die on a substrate (e.g., a semiconductor wafer). In one or more implementations, wafer-level package devices that employ example techniques in accordance with the present disclosure include an ultra-thin semiconductor wafer with metallization and vias formed in the wafer and an oxide layer on the surface of the wafer, an integrated circuit chip placed on the semiconductor wafer, an underfill layer between the integrated circuit chip and the semiconductor wafer, a buffer material formed on the semiconductor wafer, the underfill layer, and at least one side of the integrated circuit chip, an adhesive layer placed on the buffer layer and the integrated circuit chip, and a stiffener layer placed on the adhesive layer. The semiconductor device may then be segmented into individual semiconductor chip packages.

Abstract: Semiconductor devices are described that include a semiconductor device having multiple, stacked die on a substrate (e.g., a semiconductor wafer). In one or more implementations, wafer-level package devices that employ example techniques in accordance with the present disclosure include an ultra-thin semiconductor wafer with metallization and vias formed in the wafer and an oxide layer on the surface of the wafer, an integrated circuit chip placed on the semiconductor wafer, an underfill layer between the integrated circuit chip and the semiconductor wafer, a buffer material formed on the semiconductor wafer, the underfill layer, and at least one side of the integrated circuit chip, an adhesive layer placed on the buffer layer and the integrated circuit chip, and a stiffener layer placed on the adhesive layer. The semiconductor device may then be segmented into individual semiconductor chip packages.