Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.

Abstract: Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

Abstract: Embodiments of the present invention relate to circuit layouts that are compatible with printing electronic inks, printed circuits formed by printing an electronic ink or a combination of printing and conventional blanket deposition and photolithography, and methods of forming circuits by printing electronic inks onto structures having print-compatible shapes. The layouts include features having (i) a print-compatible shape and (ii) an orientation that is either orthogonal or parallel to the orientation of every other feature in the layout.

Abstract: The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

Abstract: A tunneling photovoltaic (“TPV”) device using a high-? dielectric as a tunneling layer is disclosed. The TPV includes a P-type doped silicon semiconductor substrate. Formed on its surface is an interfacial layer, between the semiconductor substrate and the high-? tunneling layer. Formed on the high-? tunneling layer is an electrode layer, or stack electrode layer, receiving charge carriers that tunnel through the tunneling layer, generating a current when the device is illuminated by light. The tunneling layer can be hafnium oxide or other suitable high-? dielectrics. A method of fabricating a high-? TPV is also disclosed. The TPV device according to the embodiments has improved internal quantum efficiency.

Abstract: Embodiments of the present invention relate to circuit layouts that are compatible with printing electronic inks, printed circuits formed by printing an electronic ink or a combination of printing and conventional blanket deposition and photolithography, and methods of forming circuits by printing electronic inks onto structures having print-compatible shapes. The layouts include features having (i) a print-compatible shape and (ii) an orientation that is either orthogonal or parallel to the orientation of every other feature in the layout.

Abstract: The present invention relates to surveillance and/or identification devices having capacitors connected in parallel or in series, and methods of making and using such devices. Devices with capacitors connected in parallel, where one capacitor is fabricated with a relatively thick capacitor dielectric and another is fabricated with a relatively thin capacitor dielectric achieve both a high-precision capacitance and a low breakdown voltage for relatively easy surveillance tag deactivation. Devices with capacitors connected in series result in increased lateral dimensions of a small capacitor. This makes the capacitor easier to fabricate using techniques that may have relatively limited resolution capabilities.

Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.

Abstract: The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

Abstract: A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.

Abstract: A method for reliable deactivation of a security (EAS) tag, and an apparatus for accomplishing the same. The method generally includes placing a security tag a first distance from a deactivation apparatus; determining whether a deactivation confirmation signal has occurred; and when it is determined that the deactivation confirmation signal did not occur, placing the security tag closer to the deactivation apparatus.

Abstract: The present invention relates to aqueous liquid compositions in which surfactant system is specifically selected so that it cleanses well, but is mild and adequately foaming. Further the composition tolerate relatively large amounts of emollient (to help mildness) while, surprisingly, showing better stability.

Abstract: Frequency divider circuits and architectures, and methods of implementing and using the same, are disclosed. In one embodiment, the frequency divider circuit includes a dynamic section that receives an input signal and outputs an intermediate signal that has a frequency lower than that of the input signal; and a static section that receives the intermediate signal and outputs a signal having a frequency that is lower than that of the intermediate signal. Stages in the dynamic and/or static section can be implemented using thin film transistors (TFTs). Embodiments of the present invention advantageously provide an approach that takes overcomes problems associated with the leakage and speed characteristics of TFTs.

Abstract: The present invention relates to aqueous liquid compositions in which surfactant system is specifically selected so that it cleanses well, but is mild and adequately foaming. Further the composition tolerate relatively large amounts of emollient (to help mildness) while, surprisingly, showing better stability.

Abstract: Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

Abstract: Embodiments of the present invention relate to circuit layouts that are compatible with printing electronic inks, printed circuits formed by printing an electronic ink or a combination of printing and conventional blanket deposition and photolithography, and methods of forming circuits by printing electronic inks onto structures having print-compatible shapes. The layouts include features having (i) a print-compatible shape and (ii) an orientation that is either orthogonal or parallel to the orientation of every other feature in the layout.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.