Patents by Inventor Vladimir Frank Drobny

Vladimir Frank Drobny has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Unguarded schottky barrier diodes
    Patent number: 10535783
    Abstract: One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: January 14, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Vladimir Frank Drobny
  • UNGUARDED SCHOTTKY BARRIER DIODES
    Publication number: 20170278984
    Abstract: One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Application
    Filed: June 6, 2017
    Publication date: September 28, 2017
    Inventor: Vladimir Frank Drobny
  • Unguarded schottky barrier diodes
    Patent number: 9705011
    Abstract: One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: July 11, 2017
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Vladimir Frank Drobny
  • UNGUARDED SCHOTTKY BARRIER DIODES
    Publication number: 20160260846
    Abstract: One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Application
    Filed: May 16, 2016
    Publication date: September 8, 2016
    Inventor: Vladimir Frank Drobny
  • Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
    Patent number: 9391160
    Abstract: One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: July 12, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Vladimir Frank Drobny
  • Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
    Patent number: 8435873
    Abstract: One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Grant
    Filed: June 4, 2007
    Date of Patent: May 7, 2013
    Assignee: Texas Instruments Incorporated
    Inventor: Vladimir Frank Drobny
  • Tuning of SOI substrate doping
    Patent number: 8093115
    Abstract: A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: January 10, 2012
    Assignee: Texas Instruments Deutschland GmbH
    Inventors: Wolfgang Schwartz, Alfred Haeusler, Vladimir Frank Drobny
  • TUNING OF SOI SUBSTRATE DOPING
    Publication number: 20110070719
    Abstract: A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.
    Type: Application
    Filed: September 21, 2010
    Publication date: March 24, 2011
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Wolfgang SCHWARTZ, Alfred HAEUSLER, Vladimir Frank DROBNY
  • UNGUARDED SCHOTTKY BARRIER DIODES
    Publication number: 20070287276
    Abstract: One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
    Type: Application
    Filed: June 4, 2007
    Publication date: December 13, 2007
    Inventor: Vladimir Frank Drobny