Abstract: A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

Abstract: A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

Abstract: A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

Abstract: A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

Abstract: A substrate processing system architecture includes an MOCVD reactor processing module coupled to a single three-level load lock chamber. The load lock has a heater at a first stationary location, a cold plate at a second secondary location, and a three-level transport system between the heater and cold plate. The transport system has two-position carrier transfer assembly with upper and lower stages, where the upper stage may move between an intermediate transfer level and an upper level proximate to the heater while the lower stage moves between a lower level proximate to the cold plate and the transfer level. The choreography of substrate transport between external loader, load lock and reactor allows substrates to be processed in the reactor while other substrates are post-process cooled, unloaded, and a new substrate loaded and preheated.

Abstract: Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

Abstract: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: Embodiments of the present invention provide an apparatus for electrochemically processing a substrate. The apparatus comprises a processing layer having a surface adapted for processing a substrate thereon, a polishing head for retaining a substrate against the processing surface, a retaining ring a terminal adapted for coupling to a power source, and a plurality of independently biasable electrodes disposed below the processing layer.

Abstract: Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: A method and apparatus for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station, detecting an endpoint of the first electrochemical processing step at or just prior to breakthrough of the exposed layer of barrier material, electrochemically processing the exposed layer of barrier material in a second electrochemical processing step in the barrier processing station, and detecting an endpoint of the second electrochemical processing step.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: An acoustic transmitter and an acoustic receiver are positioned to define a path for travel of an acoustic signal from the acoustic transmitter to the acoustic receiver. A substrate is positioned in the path so as to interrupt the acoustic signal. The acoustic receiver detects interruption of the acoustic signal. The acoustic signal path may be provided above a chamber in which the substrate is processed, such as by cleaning or drying the substrate. The acoustic signal path may be arranged at an angle relative to a plane defined by raising and lowering the substrate relative to the processing chamber. The angling of the acoustic signal path prevents interference with the signal paths provided with respect to other processing modules arranged in a linear array.