Abstract: Inorganic electrochromic materials and methods of manufacturing utilize a reactive PDC magnetron, where co-sputtering synthesis of electrochromic materials are performed: (1) directly from carbide targets; (2) from relevant transition metals and graphite target, as well as non-metal elements such as Si, Ge, P, B, etc.; (3) directly from composite targets (fine powder mixture of transition metals, non-metal elements and graphite powder). Sputtering may be performed instantly from 1 to 4 targets. For co-sputtering, a combination of gas mixtures may be used: Ar/O2/N2, Ar/H2/N2/O2, Ar/NH3/O2, Ar/CO/N2/O2, Ar/CO/H2/N2/O2, Ar/CH4/N2/O2 and Ar/NH3/CO/N2/O2. This allows obtaining electrochromic materials with increased electronic and ionic conductivity, higher coloration and good cycling (lifetime). Moreover, different tints of blue as well as gray, black and brown colors neutral to the eye may be obtained. Sputtered electrochromic films were additionally improved by “thermo-splitting” pre-intercalated thin films.

Abstract: Method for manufacturing optically transparent gel-polymer electrolytes includes reaction of copolymerization of melamine and formaldehyde or melamine and glyoxal with one or several polyols and/or with one or several monosaccharides, oligosaccharides or polysaccharides and adding of a concentrated acid to form an optically transparent gel-polymer. The electrolyte according to the invention can be used in electrochromic devices and other optical-electrochemical devices as well as in devices for storing electrical energy (such as batteries, supercapacitors and hybrid power storage devices), thus replacing conventional water-based electrolytes.

Abstract: Inorganic electrochromic materials and methods of manufacturing utilize a reactive PDC magnetron, where co-sputtering synthesis of electrochromic materials are performed: (1) directly from carbide targets; (2) from relevant transition metals and graphite target, as well as non-metal elements such as Si, Ge, P, B, etc.; (3) directly from composite targets (fine powder mixture of transition metals, non-metal elements and graphite powder). Sputtering may be performed instantly from 1 to 4 targets. For co-sputtering, a combination of gas mixtures may be used: Ar/O2/N2, Ar/H2/N2/O2, Ar/NH3/O2, Ar/CO/N2/O2, Ar/CO/H2/N2/O2, Ar/CH4/N2/O2 and Ar/NH3/CO/N2/O2. This allows obtaining electrochromic materials with increased electronic and ionic conductivity, higher coloration and good cycling (lifetime). Moreover, different tints of blue as well as gray, black and brown colors neutral to the eye may be obtained. Sputtered electrochromic films were additionally improved by “thermo-splitting” pre-intercalated thin films.

Abstract: Thin film all-solid-state power sources, including pseudocapacitors having solid inorganic Li+-ion conductive electrolyte, for IoT, microsensors, MEMS, RFID TAGs, medical devices, elements of microfluidic chips Micro Electro Harvesting and ultra-light energy storage. An electrochemical power source includes a substrate; a first current collector layer on the substrate; a first buffer/cache layer on the first current collector layer; a solid-state electrolyte layer on the first buffer/cache layer; a second buffer/cache layer on the solid-state electrolyte layer; a second current collector layer on the second buffer/cache layer. Each buffer/cache layer is formed of LiXMYO3, where M is Nb, Ta, Ti, V, X is 0.8-1.4, and Y is 1.2-0.6. The buffer/cache layer is 15-1000 nm. At least one Faradaic layer is between the first collector layer and the first buffer layer and/or between the second collector layer and the second buffer layer.

Abstract: Thin film all-solid-state power sources, including pseudocapacitors having solid inorganic Li+-ion conductive electrolyte, for IoT, microsensors, MEMS, RFID TAGs, medical devices, elements of microfluidic chips Micro Electro Harvesting and ultra-light energy storage. An electrochemical power source includes a substrate; a first current collector layer on the substrate; a first buffer/cache layer on the first current collector layer; a solid-state electrolyte layer on the first buffer/cache layer; a second buffer/cache layer on the solid-state electrolyte layer; a second current collector layer on the second buffer/cache layer. Each buffer/cache layer is formed of LiXMYO3, where M is Nb, Ta, Ti, V, X is 0.8-1.4, and Y is 1.2-0.6. The buffer/cache layer is 15-1000 nm. At least one Faradaic layer is between the first collector layer and the first buffer layer and/or between the second collector layer and the second buffer layer.