Patents by Inventor Vladimir Sleptsov
Vladimir Sleptsov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8462483Abstract: The invention relates to the field of electrical engineering, in particular to multilayer film electrodes for electrolytic capacitors. The proposed multilayer anode is implemented as a substrate with a developed surface on which are sequentially arrayed a conforming layer of a valve metal, which is connected by a heterojunction formed by nanoparticles of the substrate metal and of the valve metal, which are geometrically closed between each other, and an oxide coating. The substrate is connected to the film base through a nanocomposite barrier layer, which comprises a differentiated mixture of the materials being joined, whose content varies relative to each other,[so that] together they amount to 100%, where the working surface is formed in practice by the substrate metal. What is novel is that a metal with a hardness 2-4 times greater than that of the valve metal, preferably titanium, is used as the substrate material, and the pores of the valve-metal layer are limited in size to the range 1-104 nm.Type: GrantFiled: November 21, 2008Date of Patent: June 11, 2013Assignee: C-K Group Ltd.Inventors: Igor Shcherbakov, Vladimir Sleptsov
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Patent number: 7943237Abstract: The invention pertains to high-molecular compound-based composite materials using carbon and can be used for anodes of electrolytic capacitors made on the elastic dielectric film base with current-carrying coating. Polyester-base film material chiefly of polyethylene terephthalate has nanodimensional metal coating. New is that a diamond-like layer 5-50 nm thick is placed between the modified surface of the polyester base and metal coating and a sponge metal layer 0.5-20 ?m thick is made on the metal coating surface, said sponge metal layer has a surface development factor within the range of 80-400 and the diamond-like nanolayer is sp3-hybridization of amorphous carbon atoms gas-phase deposited in vacuum by means of a ion-plasmous source. The proposed film material with a wide range of electrophysical properties is intended to be used in microelectronics and radio engineering as versatile constructional material.Type: GrantFiled: April 12, 2006Date of Patent: May 17, 2011Inventors: Igor Shcherbakov, Vladimir Sleptsov, Vladimir Kislov
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Publication number: 20110007450Abstract: The invention relates to the field of electrical engineering, in particular to multilayer film electrodes for electrolytic capacitors. The proposed multilayer anode is implemented as a substrate with a developed surface on which are sequentially arrayed a conforming layer of a valve metal, which is connected by a heterojunction formed by nanoparticles of the substrate metal and of the valve metal, which are geometrically closed between each other, and an oxide coating. The substrate is connected to the film base through a nanocomposite barrier layer, which comprises a differentiated mixture of the materials being joined, whose content varies relative to each other, together they amount to 100%, where the working surface is formed in practice by the substrate metal. What is novel is that a metal with a hardness 2-4 times greater than that of the valve metal, preferably titanium, is used as the substrate material, and the pores of the valve-metal layer are limited in size to the range 1-104 nm.Type: ApplicationFiled: November 21, 2008Publication date: January 13, 2011Applicant: Vostok, LLCInventors: Igor Shcherbakov, Vladimir Sleptsov
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Patent number: 7820292Abstract: The invention pertains to high-molecular compound-based composite materials using carbon in nanostructured coatings including additional elements and bonds. Nanostructured coating of the carrying base comprises layers of amorphous carbon of sp-, sp2- and sp3-hybridized states of carbon atoms. New is that coating with a highly-developed surface of the polyester film base is directly bonded by the layer of sp3-hybridized state of carbon atoms and has on top an extra metal layer 25-250 nm thick; at the same time the film base surface has corrugations 10-30 nm deep and/or is furnished with pores 0.2-6 micron in size of a total volume of 10-60%, with ?-? portion of pores made through.Type: GrantFiled: May 16, 2006Date of Patent: October 26, 2010Assignee: C-K Group LtdInventors: Igor Shcherbakov, Vladimir Sleptsov, Sergey Dmitriev, Mikhail Itkis
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Patent number: 7622721Abstract: A focused ion source based on a Hall thruster with closed loop electron drift and a narrow acceleration zone is disclosed. The ion source of the invention has an ion focusing system consisting of two parts. The first part is a ballistic focusing system in which the aperture through which the beam exits the discharge channel is tilted. The second is a magnetic focusing system which focuses the ion beam exiting the discharge channel by canceling a divergent magnetic field present at the aperture through which the beam exits the discharge channel. The ion source of the invention also has an in-line hollow cathode capable of forming a self-sustaining discharge. The invention further reduces substrate contamination, while increasing the processing rate. Further the configuration disclosed allows the ion source to operate at lower operational gas pressures.Type: GrantFiled: February 9, 2007Date of Patent: November 24, 2009Inventors: Michael Gutkin, Alexander Bizyukov, Vladimir Sleptsov, Ivan Bizyukov, Konstantin Sereda
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Publication number: 20090202784Abstract: The invention pertains to high-molecular compound-based composite materials using carbon in nanostructured coatings including additional elements and bonds. Nanostructured coating of the carrying base comprises layers of amorphous carbon of sp-, sp2- and sp3-hybridized states of carbon atoms. New is that coating with a highly-developed surface of the polyester film base is directly bonded by the layer of sp3-hybridized state of carbon atoms and has on top an extra metal layer 25-250 nm thick; at the same time the film base surface has corrugations 10-30 nm deep and/or is furnished with pores 0.2-6 micron in size of a total volume of 10-60%, with ?-? portion of pores made through.Type: ApplicationFiled: May 16, 2006Publication date: August 13, 2009Inventors: Igor Shcherbakov, Vladimir Sleptsov, Sergey Dmitriev, Mikhail Itkis
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Publication number: 20090061250Abstract: The invention pertains to high-molecular compound-based composite materials using carbon and can be used for anodes of electrolytic capacitors made on the elastic dielectric film base with current-carrying coating. Polyester-base film material chiefly of polyethylene terephthalate has nanodimensional metal coating. New is that a diamond-like layer 5-50 nm thick is placed between the modified surface of the polyester base and metal coating and a sponge metal layer 0.5-20 ?m thick is made on the metal coating surface, said sponge metal layer has a surface development factor within the range of 80-400 and the diamond-like nanolayer is sp3-hybridization of amorphous carbon atoms gas-phase deposited in vacuum by means of a ion-plasmous source. The proposed film material with a wide range of electrophysical properties is intended to be used in microelectronics and radio engineering as versatile constructional material.Type: ApplicationFiled: April 12, 2006Publication date: March 5, 2009Applicant: Vostok LTD.Inventors: Igor Shcherbakov, Vladimir Sleptsov
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Publication number: 20090020415Abstract: The present invention discloses technology for thin film ion beam sputter deposition on a substrate. The apparatus is a self-contained ion beam deposition source, which can be attached to or positioned inside of a vacuum chamber where substrates are located. This source consists of one or more ion beam sources combined with one or more sputtering targets and a unified magnetic field acting as a devise controlling delivery of the charged particles to the treated by the Iontron workpiece (substrate). The ion beam emits ion beams toward the target that generate sputtered particles directed toward the substrate, thus creating a thin film on the surface of the substrate. The target can be electrically biased, not biased or floating, thus allowing for modulation of the location upon which the charged ions impinge the target. Additionally, the position of the target can be adjusted relatively to the ion beam.Type: ApplicationFiled: July 16, 2007Publication date: January 22, 2009Inventors: Michael Gutkin, Alexander Bizyukov, Vladimir Sleptsov, Ivan Bizyukov, Konstantin Sereda
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Publication number: 20080191629Abstract: A focused ion source based on a Hall thruster with closed loop electron drift and a narrow acceleration zone is disclosed. The ion source of the invention has an ion focusing system consisting of two parts. The first part is a ballistic focusing system in which the aperture through which the beam exits the discharge channel is tilted. The second is a magnetic focusing system which focuses the ion beam exiting the discharge channel by canceling a divergent magnetic field present at the aperture through which the beam exits the discharge channel. The ion source of the invention also has an in-line hollow cathode capable of forming a self-sustaining discharge. The invention further reduces substrate contamination, while increasing the processing rate. Further the configuration disclosed allows the ion source to operate at lower operational gas pressures.Type: ApplicationFiled: February 9, 2007Publication date: August 14, 2008Inventors: Michael Gutkin, Alexander Bizyukov, Vladimir Sleptsov, Ivan Bizyukov, Konstantin Sereda