Abstract: A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG?0.5 ?m. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).

Abstract: A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.

Abstract: A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.

Abstract: A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG?0.5 ?m. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).

Abstract: A data carrier includes at least one coil for the contactless reception of amplitude-modulated signals. A rectifier circuit is connected downstream of the coil. A circuit configuration processes and/or stores data. A supply-voltage control circuit is connected in parallel with the circuit configuration. A current measuring device acts as an amplitude demodulator and is disposed between the coil and the voltage-supply control circuit.

Abstract: A method for demodulating a voltage which has been ASK modulated by changing the amplitude between a low level and a high level, in particular for use during contactless data transmission from a card reader/writer to a smart card, is described. The method is distinguished, in that, in an initialization phase, a first mean value is produced from the high voltage level and a stored partial voltage derived therefrom in order to detect a change to a low voltage level. The change to the low voltage level represents a start value and is detected by a subsequent comparison of the modulated voltage with the first mean value. In a subsequent demodulation phase, a second mean value is produced from the detected low voltage level and the high voltage level in order to demodulate the modulated voltage by comparing the modulated voltage with the second mean value.