Patents by Inventor Volker Harle
Volker Harle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9431580Abstract: A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.Type: GrantFiled: September 26, 2007Date of Patent: August 30, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Volker Härle, Christine Höss, Alfred Lell, Uwe Strauss
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Patent number: 9174400Abstract: A method for producing structures (5) on a multiplicity of optoelectronic components (1), wherein the multiplicity of optoelectronic components (1) are arranged on an auxiliary carrier (10) and the structures (5) are produced by carrying out a movement of a first roller (15) relative to the auxiliary carrier (10) and producing the structures (5) in the process by means of exerting a pressure between the first roller (15) and the auxiliary carrier (10).Type: GrantFiled: February 15, 2007Date of Patent: November 3, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Berthold Hahn, Volker Härle
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Patent number: 8994000Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.Type: GrantFiled: July 11, 2012Date of Patent: March 31, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Avramescu, Volker Härle, Lutz Höppel, Matthias Peter, Matthias Sabathil, Uwe Strauss
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Patent number: 8877529Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.Type: GrantFiled: March 8, 2012Date of Patent: November 4, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Berthold Hahn, Volker Härle, Reiner Windisch
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Patent number: 8809086Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.Type: GrantFiled: February 16, 2012Date of Patent: August 19, 2014Assignee: OSRAM GmbHInventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Volker Härle
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Publication number: 20140203413Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.Type: ApplicationFiled: December 16, 2011Publication date: July 24, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Johannes Baur, Berthold Hahn, Volker Härle, Karl Engl, Joachim Hertkorn, Tetsuya Taki
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Patent number: 8728937Abstract: For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.Type: GrantFiled: January 8, 2010Date of Patent: May 20, 2014Assignee: Osram Opto Semiconductors GmbHInventors: Andreas Ploessl, Stephan Kaiser, Volker Härle, Berthold Hahn
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Patent number: 8658447Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.Type: GrantFiled: March 8, 2012Date of Patent: February 25, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Berthold Hahn, Volker Härle, Reiner Windisch
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Patent number: 8658446Abstract: Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material.Type: GrantFiled: November 3, 2008Date of Patent: February 25, 2014Assignee: OSRAM Opto Semiconductors GmbHInventor: Volker Härle
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Patent number: 8604497Abstract: A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).Type: GrantFiled: September 26, 2003Date of Patent: December 10, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Dominik Eisert, Berthold Hahn, Volker Härle
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Patent number: 8598014Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.Type: GrantFiled: October 26, 2011Date of Patent: December 3, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Michael Fehrer, Berthold Hahn, Volker Härle, Stephan Kaiser, Frank Otte, Andreas Plössl
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Patent number: 8581279Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).Type: GrantFiled: June 2, 2006Date of Patent: November 12, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Johannes Baur, Volker Härle, Berthold Hahn, Andreas Weimar, Raimund Oberschmid, Ewald Karl Michael Guenther, Franz Eberhard, Markus Richter, Jörg Strauss
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Patent number: 8575003Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.Type: GrantFiled: August 21, 2009Date of Patent: November 5, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Michael Fehrer, Berthold Hahn, Volker Härle, Stephan Kaiser, Frank Otte, Andreas Plössl
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Patent number: 8524573Abstract: A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.Type: GrantFiled: January 27, 2004Date of Patent: September 3, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Stephan Kaiser, Volker Härle, Berthold Hahn
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Patent number: 8502264Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).Type: GrantFiled: April 20, 2007Date of Patent: August 6, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Volker Hârle, Uwe Strauss, Georg Brüderl, Christoph Eichler, Adrian Avramescu
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Patent number: 8476643Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.Type: GrantFiled: April 13, 2007Date of Patent: July 2, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Berthold Hahn, Volker Härle, Reiner Windisch
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Patent number: 8368092Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).Type: GrantFiled: January 25, 2005Date of Patent: February 5, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Berthold Hahn, Volker Härle, Raimund Oberschmid, Andreas Weimar
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Publication number: 20120280207Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.Type: ApplicationFiled: July 11, 2012Publication date: November 8, 2012Applicant: OSRAM Opto Semiconductors GmbHInventors: Adrian AVRAMESCU, Volker Härle, Lutz Höppel, Matthias Peter, Matthias Sabathil, Uwe Strauss
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Patent number: 8304799Abstract: Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.Type: GrantFiled: February 18, 2011Date of Patent: November 6, 2012Assignee: Osram Opto Semiconductors GmbHInventor: Volker Härle
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Patent number: 8273593Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.Type: GrantFiled: February 15, 2011Date of Patent: September 25, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Berthold Hahn, Stephan Kaiser, Volker Härle