Patents by Inventor Volker Hemel

Volker Hemel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BOAT TRANSFER METHOD AND HEAT TREATMENT APPARATUS
    Publication number: 20220122867
    Abstract: With respect to a boat transfer method for transferring a boat holding a substrate into a processing chamber, the boat transfer method includes supplying a reducing gas into the processing chamber, and transferring the boat into the processing chamber in a state in which the reducing gas is present within the processing chamber.
    Type: Application
    Filed: October 4, 2021
    Publication date: April 21, 2022
    Inventors: Shingo HISHIYA, Hiroaki IKEGAWA, Volker HEMEL, Bernhard ZOBEL, Sung Duk SON
  • Film forming method and apparatus
    Patent number: 9076649
    Abstract: A method of forming a thin film on a surface of target objects in a vacuum-evacuable processing chamber by using a source gas and a reaction gas includes: forming a mixed gas by mixing the source gas and an inert gas in a gas reservoir tank, and supplying the mixed gas and the reaction gas into the processing chamber.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: July 7, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keisuke Suzuki, Kentaro Kadonaga, Volker Hemel, Bernhard Zobel
  • FILM FORMING METHOD AND APPARATUS
    Publication number: 20130323935
    Abstract: A method of forming a thin film on a surface of target objects in a vacuum-evacuable processing chamber by using a source gas and a reaction gas includes: forming a mixed gas by mixing the source gas and an inert gas in a gas reservoir tank, and supplying the mixed gas and the reaction gas into the processing chamber.
    Type: Application
    Filed: May 30, 2013
    Publication date: December 5, 2013
    Inventors: Keisuke SUZUKI, Kentaro KADONAGA, Volker HEMEL, Bernhard ZOBEL
  • Method of forming thin dielectric layers
    Publication number: 20050276922
    Abstract: Atomic layer deposition of very thin dielectric metal oxide layers in manufacturing of semiconductor devices by ozone oxidation of precursor monolayers leads to unacceptable impurity content and leakage current of the layers. It is proposed to perform precursor oxidation by means of radicals generated by oxidizing and reductive gases, which are simultaneously fed into the reaction vessel. This way very low impurity content and leakage current is achieved even in very thin (several nm) layers.
    Type: Application
    Filed: June 10, 2004
    Publication date: December 15, 2005
    Inventors: Henry Bernhardt, Volker Hemel