Abstract: A display unit includes a transparent or translucent layer with a display side and a rear side, with an opaque or semitransparent layer on the display side, containing a plurality of apertures, a plurality of illuminants which are present at, or at a distance from, the rear side of the transparent or translucent layer, at least partly embedded in the layer, wherein at least one illuminant is substantially behind one of the apertures in each case configured and designed to emit light in the direction of and through the aperture, a transparent or translucent lamination ply adjoining the opaque or semitransparent layer and covering the plurality of apertures, and a transparent or translucent protective layer adjoining this lamination ply. Also disclosed are a display apparatus and a traffic guidance system comprising such a display unit, and use of the display unit as a media energy façade or a daylight display.

Abstract: A display unit includes a transparent or translucent layer with a display side and a rear side, with an opaque or semitransparent layer on the display side, containing a plurity of apertures, a plurality of illuminants, which are present at, or at a distance from, the rear side of the transparent or translucent layer, at least partly embedded in the layer, wherein at least one illuminant is substantially behind one of the apertures in each case configured and designed to emit light in the direction of and through the aperture, a transparent or translucent lamination ply adjoining the opaque or semitransparent layer and covering the plurity of apertures, and a transparent or translucent protective layer adjoining this lamination ply. Also disclosed are a display apparatus and a traffic guidance system comprising such a display unit, and use if the display unit as a media energy façade or a daylight display.

Abstract: A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or polycrystalline metal oxides with the aid of physical or chemical vapor deposition using a coating system, in particular with the aid of a sputtering gas, in which at least two, in particular at least six, coating layers are vapor deposited one on top of the other forming polycrystalline metal oxides in each case.

Abstract: A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and/or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and/or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor is located inside the processing chamber. The elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device.

Abstract: A processing device for processing stacked processed goods for the production of conducting, semiconducting, or insulating thin layers includes, in at least one embodiment, an evacuatable process chamber configured to receive a process gas. A tempering device keeps at least a partial region of a wall of the evacuatable process chamber at a predetermined first temperature during at least part of the processing. The first temperature is between a second temperature that is room temperature and a third temperature, generated in the evacuatable process chamber, that is above room temperature. A heated gas flow cycle flows through a gas guiding device in the evacuatable process chamber. The stacked processed goods are insertable through a lockable loading opening into the gas guiding device, and a gas inlet device feeds the process gas into the gas flow cycle. A process system may further include a cooling device and/or a channeling device.

Abstract: A multilayer back electrode for a photovoltaic thin-film solar cell, including: at least one bulk back electrode layer, at least one, ohmic, contact layer, obtained by applying at least one ply containing/essentially made of at least one metal chalcogenide, selected from molybdenum, tungsten, tantalum, cobalt, and/or niobium, and the chalcogen being selected from selenium and/or sulfur, with physical or chemical gas phase deposition while using at least one metal chalcogenide source, or obtained by applying at least one metal ply (first ply), the first ply and the bulk back electrode layer not corresponding in their composition, in the particular metal used or, if multiple metals are in the metal ply and the bulk back electrode layer, with regard to at least one, in particular all of these metals (Mo, W, Ta, Nb, and/or Co) and a metal chalcogenide ply (second ply), use of the back electrode for manufacturing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the back

Abstract: A multilayer back electrode for a photovoltaic thin-film solar cell includes, in the following sequence: at least one bulk back electrode layer containing at least one of V, Mn, Cr, Mo, Co, Zr, Ta, Nb, and W; at least one conductive barrier layer; and at least one ohmic contact layer containing (i) at least one first ply adjacent to the at least one conductive barrier layer, the at least one first ply containing at least one of Mo, W, Ta, Nb, Zr and Co, and (ii) at least one second ply not adjacent to the at least one barrier layer, the at least one second ply containing at least one metal chalcogenide.

Abstract: A method for manufacturing photovoltaic thin-film solar modules, including: applying a back electrode layer to a substrate, applying at least one conductive barrier layer, applying at least one contact layer, applying at least one kesterite or chalcopyrite semiconductor absorber layer, applying at least one buffer layer, removing the applied layers with laser treatment with formation of first separating trenches, filling the first separating trenches using at least one insulating material, removing layers extending from the barrier layer in the direction of the semiconductor absorber layer with formation of second separating trenches, or chemical phase transformation or thermal decomposition of layers extending from the barrier layer in the direction of the semiconductor absorber layer with the formation of first linear conductive areas, applying at least one transparent front electrode layer with filling and contacting of the second separating trenches or with contacting of the first linear conductive areas,

Abstract: A photovoltaic thin-film solar module includes in the following sequence: a substrate layer; a back electrode layer directly adjoining the substrate layer; a conductive barrier layer directly adjoining at least one of the back electrode layer and the substrate layer; an ohmic contact layer directly adjoining the barrier layer; one of a chalcopyrite or kesterite semiconductor absorber layer directly adjoining the contact layer; a first buffer layer directly adjoining the semiconductor absorber layer and containing one of Zn(S,OH) or In2S3; a second buffer layer directly adjoining one of the semiconductor absorber layer or the first buffer layer; and a transparent front electrode layer directly adjoining at least one of the semiconductor absorber layer, the first buffer layer, and the second buffer layer, the transparent front electrode layer containing n-doped zinc oxide.

Abstract: A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and/or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and/or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor is located inside the processing chamber. The elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device.

Abstract: The invention relates to a method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in particular flat substrates, containing at least one conducting, semiconducting and/or insulating layer, in which a substrate which is provided with at least one metal layer and/or with at least one layer containing metal, in particular a stack of substrates, each of which is provided with at least one metal layer and/or with at least one layer which contains metal, is inserted into a processing chamber and heated to a predetermined substrate temperature; elementary selenium and/or sulphur vapor is guided past on the or on every metal layer and/or layer containing metal, from a source located inside and/or outside the processing chamber, in particular by means of a carrier gas which is in particular inert, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to react chemically with said layer with selenium or sulphur in a tar

Abstract: A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapor deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapor deposition; and wherein the second layer is arranged between the first and third layers.

Abstract: A thermal evaporation apparatus for depositing of a material on a substrate is described. The apparatus can comprise material storage means; heating means to generate a vapour of the material in the material storage means; vapour outlet means comprising a vapour receiving pipe having vapour outlet passages, and emission reducing means arranged such that an external surface of the vapour outlet means directed to said substrate exhibits low emission. Also the use of the apparatus, and a method of depositing a material onto a substrate by thermal evaporation are described.

Abstract: A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or polycrystalline metal oxides with the aid of physical or chemical vapor deposition using a coating system, in particular with the aid of a sputtering gas, in which at least two, in particular at least six, coating layers are vapor deposited one on top of the other forming polycrystalline metal oxides in each case.

Abstract: A thermal evaporation apparatus for depositing of a material on a substrate is described. The apparatus can comprise material storage means; heating means to generate a vapour of the material in the material storage means; vapour outlet means comprising a vapour receiving pipe having vapour outlet passages, and emission reducing means arranged such that an external surface of the vapour outlet means directed to said substrate exhibits low emission. Also the use of the apparatus, and a method of depositing a material onto a substrate by thermal evaporation are described.

Abstract: The invention relates to a method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in particular flat substrates, containing at least one conducting, semiconducting and/or insulating layer, in which a substrate which is provided with at least one metal layer and/or with at least one layer containing metal, in particular a stack of substrates, each of which is provided with at least one metal layer and/or with at least one layer which contains metal, is inserted into a processing chamber and heated to a predetermined substrate temperature; elementary selenium and/or sulphur vapor is guided past on the or on every metal layer and/or layer containing metal, from a source located inside and/or outside the processing chamber, in particular by means of a carrier gas which is in particular inert, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to react chemically with said layer with selenium or sulphur in a tar

Abstract: Thermal evaporation apparatus for depositing of a material on a substrate, comprising material storage means; heating means to generate a vapor of the material in the material storage means; vapor outlet means comprising a vapor receiving pipe having vapor outlet passages, and emission reducing means arranged such that an external surface of the vapor outlet means directed to said substrate exhibits low emission, and wherein the apparatus further comprises pipe heating means in the interior of said vapor outlet means, wherein at least the surfaces of the material storage means, heating means, and emission reducing means and pipe heating means arranged to come into contact with the material vapor are of a corrosion-resistant material.

Abstract: The invention relates to a processing device for the processing of in particular stacked proceed goods, particularly in the form of planar substrates for the production of thin layers, particularly of conducting, semiconducting, or insulating thin layers, comprising an evacuatable processing chamber for receiving a process gas, comprising at least one tempering device, particularly at least in sections in and/or in thermal operative connection with at least one wall, particularly all walls of the processing chamber, said chamber being equipped and suited to keep at least a partial region of the wall, particularly substantially the entire process chamber wall, of the process chamber at a predetermined temperature, particularly to keep the same at a first temperature during at least part of the processing of the stacked processed goods, said temperature not being below room temperature as the second temperature, and being below a third temperature which can be generated in the processing chamber and is above ro

Abstract: A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapour deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapour deposition; and wherein the second layer is arranged between the first and third layers.

Abstract: Thermal evaporation apparatus for depositing of a material on a substrate, comprising material storage means; heating means to generate a vapour of the material in the material storage means; vapour outlet means comprising a vapour receiving pipe having vapour outlet passages, and emission reducing means arranged such that an external surface of the vapour outlet means directed to said substrate exhibits low emission, and wherein the apparatus further comprises pipe heating means in the interior of said vapour outlet means, wherein at least the surfaces of the material storage means, heating means, and emission reducing means and pipe heating means arranged to come into contact with the material vapour are of a corrosion-resistant material.