Abstract: A sensor device comprises a dielectric substrate, a busbar mechanically connected to the dielectric substrate, a cavity formed in the dielectric substrate, and a sensor chip arranged in the cavity, wherein the sensor chip is designed to detect a magnetic field induced by an electric current flowing through the busbar, wherein in an orthogonal projection of the sensor chip onto the busbar, the sensor chip at least partly overlaps the busbar.

Abstract: A sensor device comprises an electrically conductive chip carrier, wherein the chip carrier comprises an auxiliary structure, wherein the auxiliary structure comprises a first precalibration current terminal and a second precalibration current terminal, a magnetic field sensor chip arranged on a mounting surface of the chip carrier, wherein the magnetic field sensor chip comprises a sensor element, wherein the shape of the auxiliary structure is embodied such that an electrical precalibration current flowing from the first precalibration current terminal to the second precalibration current terminal through the auxiliary structure induces a predefined precalibration magnetic field at the location of the sensor element, wherein during measurement operation of the precalibrated sensor device, no precalibration current flows between the first precalibration current terminal and the second precalibration current terminal.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.

Abstract: A package and method of manufacturing a package is disclosed. In one example, the package includes a carrier having an accommodation through hole. A component is arranged at least partially within the accommodation through hole. A connection structure connects the carrier with the component.

Abstract: A current sensor package, comprises a current path and a sensing device. The sensing device is spaced from the current path, and the sensing device is configured for sensing a magnetic field generated by a current flowing through the current path. Further, the sensing device comprises a sensor element. The sensing device is electrically connected to a conductive trace. An encapsulant extends continuously between the current path and the sensing device.

Abstract: A semiconductor device includes a substrate, a semiconductor die attached to the substrate, and an encapsulation material. The semiconductor die includes a sensing element. The encapsulation material encapsulates the semiconductor die and a portion of the substrate. The encapsulation material defines a through-hole to receive a conductive element. The sensing element may include a magnetic field sensor to sense a magnetic field generated by the conductive element.

Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.

Abstract: A package and method of manufacturing a package is disclosed. In one example, the package includes a carrier having an accommodation through hole. A component is arranged at least partially within the accommodation through hole. A connection structure connects the carrier with the component.

Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.

Abstract: A semiconductor device includes a substrate, a semiconductor die attached to the substrate, and an encapsulation material. The semiconductor die includes a sensing element. The encapsulation material encapsulates the semiconductor die and a portion of the substrate. The encapsulation material defines a through-hole to receive a conductive element. The sensing element may include a magnetic field sensor to sense a magnetic field generated by the conductive element.

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.

Abstract: A semiconductor device package includes a leadframe and a semiconductor chip mounted to the leadframe. The semiconductor device package further includes a molded encapsulant configured to cast-in-place the leadframe. A surface area of the leadframe remains exposed by the encapsulant. An electrically insulating covering layer extends over a part of the surface area and is configured to divide the surface area in at least two zones.

Abstract: In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.

Abstract: A current sensor device includes a casing having a cavity and a conductor fixedly mounted to the casing. A semiconductor chip configured to sense a magnetic field is arranged in the cavity. An electrically insulating medium is configured to at least partially fill the cavity of the casing.

Abstract: In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.

Abstract: A semiconductor device package includes a leadframe and a semiconductor chip mounted to the leadframe. The semiconductor device package further includes a molded encapsulant configured to cast-in-place the leadframe. A surface area of the leadframe remains exposed by the encapsulant. An electrically insulating covering layer extends over a part of the surface area and is configured to divide the surface area in at least two zones.