Abstract: An energy storage device for generating an n-phase supply voltage includes a plurality of energy supply branches that are connected in parallel, each of which is connected to an output connector of the energy storage device. Each of the energy supply branches includes a plurality of energy storage modules that are connected in series, each having at least one energy storage cell, and having a plurality of coupling modules connected to one of the plurality of energy storage modules, respectively, each configured to couple, or to bridge, the connected energy storage module with the energy supply branch. The energy storage device further includes a control system.

Abstract: A method is provided for operating a vehicle, wherein during coasting of the vehicle, in order to reach a route position of a driving route that is still to be travelled, at a desired speed that is less than a vehicle speed at the start of coasting, a vehicle actual speed is compared with a vehicle target speed and an action is performed in dependence on the comparison. This renders possible a continuous adaptation of the driving resistance, so the desired speed is reliably reached. Interfering variables such as wind or gradient may be compensated for. A device is provided for operating a vehicle, and to a computer program.

Abstract: A method is provided for operating a vehicle, wherein during coasting of the vehicle, in order to reach a route position of a driving route that is still to be travelled, at a desired speed that is less than a vehicle speed at the start of coasting, a vehicle actual speed is compared with a vehicle target speed and an action is performed in dependence on the comparison. This renders possible a continuous adaptation of the driving resistance, so the desired speed is reliably reached. Interfering variables such as wind or gradient may be compensated for. A device is provided for operating a vehicle, and to a computer program.

Abstract: An energy storage device for generating an n-phase supply voltage includes a plurality of energy supply branches that are connected in parallel, each of which is connected to an output connector of the energy storage device. Each of the energy supply branches includes a plurality of energy storage modules that are connected in series, each having at least one energy storage cell, and having a plurality of coupling modules connected to one of the plurality of energy storage modules, respectively, each configured to couple, or to bridge, the connected energy storage module with the energy supply branch. The energy storage device further includes a control system.

Abstract: The high-voltage semiconductor device includes a single chip having a plurality of semiconductor elements connected in series with each other which includes an insulating substrate (2); a monocrystalline semiconductor carrier (1) of a first conductivity type applied to the insulating substrate (2); at least two terminals (5,6) located on opposite sides of the chip; strip-like areas (3) of a second conductivity type formed in the monocrystalline semiconductor carrier (1), the strip-like areas (3) each extending across the semiconductor carrier (1) at right angles to a longitudinal direction between the at least two terminals, forming pn junctions in the semiconductor carrier (1), being spaced from each other in the longitudinal direction over the single chip and penetrating an entire thickness of the semiconductor carrier; at least one doped region (7) in the strip-like areas (3) forming an at least four layered component in the single chip; and a light responsive device for reducing a switching voltage of the

Abstract: A monolithically integrated circuit arrangement is arranged in a disc-shaped monocrystalline semiconductor body (100) of a first conductivity type, which semiconductor body consists of silicon and has a first and second main surface. The monolithically integrated circuit arrangement contains a vertical MOSFET power transistor (T1) which consists of a plurality of partial transistors connected in parallel and surrounded by a guard ring (4) of a second conductivity type opposite that of the semiconductor body (100). Proceeding from the first main surface (13), at least one zone (7, 8) of the conductivity type of the semiconductor body (100) but of increased impurity concentration is diffused into the guard ring (4) so as to form at least one active and/or passive peripheral circuit element (T2) which has a protective and/or regulating and/or control function.

Abstract: The invention relates to a method of determining the position of a p-n junction or the depth of penetration of the diffused electrode in the case of semiconductor devices produced by planar technology. According to the invention, a test pattern which comprises N pairs of windows, the spacing of which increases from pair to pair, is included in exposure. During the diffusion operation, the tubs produced overlap in the pairs of windows lying relatively close together, touch in one pair of windows (n.sub.o) and are separate from each other in pairs of windows lying relatively far apart. With the aid of a resistance measurement, the pair of windows (n.sub.o) in which the two tubs are still just touching is established, from which the lateral depth of penetration Y.sub.j is obtained as half the spacing of this pair of windows. From the lateral depth of penetration, the vertical depth of penetration X.sub.j can be established by means of the relationship X.sub.j =C.multidot.Y.sub.j.