Abstract: A protection circuit including complementary bipolar transistors having collectors connected to an input and base and emitters connected together to a respective voltage source. The bipolar transistors are lateral transistors having a field plate over the base region and spaced laterally from the laterally spaced collector and emitter regions. The base may include increased impurity surface regions extending from the emitter and collector to the gate to increase the beta and decrease the collector-base breakdown.

Abstract: An input resistor-diode protection circuit having an input resistor formed by a high impurity region within a deeper low impurity region, both a first conductivity type and input diode formed by the junction of the low impurity resistor region and the substrate along a substantial portion and a high impurity region overlapping the low impurity region at the output end of the resistor-diode circuit, both of a second conductivity type. A bipolar transistor connected to the output of the resistor in parallel to the diode also provides protection. A pair of concentric guard rings of first and second conductivity type laterally encompasses the input protection circuit.

Abstract: Current compensation for inverting logic gates is achieved by using a current mirror having a controlling leg equivalent to the input structure of the logic gate which is in the controlled leg. The controlling leg receives a reference voltage signal equal to the input signal to the logic gate which creates a leakage current. A plurality of controlled legs can be used with a single controlling leg to provide current compensation for a plurality of logic gates.