Patents by Inventor Wade Zawalski

Wade Zawalski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for providing pulsed plasma during a portion of a semiconductor wafer process
    Patent number: 6566272
    Abstract: A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.
    Type: Grant
    Filed: July 23, 1999
    Date of Patent: May 20, 2003
    Assignee: Applied Materials Inc.
    Inventors: Alex Paterson, John M. Yamartino, Peter K. Loewenhardt, Wade Zawalski
  • Plasma energy control by inducing plasma instability
    Patent number: 6558564
    Abstract: In the present invention, electron temperature is controlled by modifying the power delivered to the plasma by inducing or enhancing natural instabilities between the plasma and the power source. As a result, no pulse modulation of the RF power or RF generator is required. The instability is enhanced until the desired reduction in electron temperature has been achieved. In accordance with the invention, there are several modes for inducing such a natural instability.
    Type: Grant
    Filed: April 5, 2000
    Date of Patent: May 6, 2003
    Assignee: Applied Materials Inc.
    Inventors: Peter K. Loewenhardt, Wade Zawalski
  • METHOD FOR PROVIDING PULSED PLASMA DURING A PORTION OF A SEMICONDUCTOR WAFER PROCESS
    Publication number: 20020052111
    Abstract: A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.
    Type: Application
    Filed: July 23, 1999
    Publication date: May 2, 2002
    Inventors: ALEX PATERSON, JOHN M. YAMARTINO, JOHN M. LOEWENHARDT, WADE ZAWALSKI
  • Plasma assisted processing chamber with separate control of species density
    Patent number: 6352049
    Abstract: The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
    Type: Grant
    Filed: July 20, 1998
    Date of Patent: March 5, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Gerald Yin, Arnold Kolandenko, Hong Ching Shan, Peter Loewenhardt, Chii Lee, Yan Ye, Xueyan Qian, Songlin Xu, Arthur Chen, Arthur Sato, Michael Grimbergen, Diana Ma, John Yamartino, Chun Yan, Wade Zawalski