Patents by Inventor Wagno Alves Braganca, JR.
Wagno Alves Braganca, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170422Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.Type: ApplicationFiled: January 31, 2024Publication date: May 23, 2024Applicant: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, JR., KyungOe Kim, TaeKeun Lee
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Patent number: 11929334Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.Type: GrantFiled: October 12, 2020Date of Patent: March 12, 2024Assignee: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, Jr., KyungOe Kim, TaeKeun Lee
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Patent number: 11817357Abstract: A semiconductor device is formed by providing a semiconductor die. A laser-assisted bonding (LAB) assembly is disposed over the semiconductor die. The LAB assembly includes an infrared (IR) camera. The IR camera is used to capture an image of the semiconductor die. Image processing is performed on the image to identify corners of the semiconductor die. Regions of interest (ROI) are identified in the image relative to the corners of the semiconductor die. Parameters can be used to control the size and location of the ROI relative to the respective corners. The ROI are monitored for temperature using the IR camera while LAB is performed.Type: GrantFiled: June 9, 2021Date of Patent: November 14, 2023Assignee: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, Jr., KyungOe Kim
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Publication number: 20230307414Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.Type: ApplicationFiled: May 11, 2023Publication date: September 28, 2023Applicant: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, JR., KyungOe Kim
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Publication number: 20230260865Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.Type: ApplicationFiled: April 24, 2023Publication date: August 17, 2023Applicant: STATS ChipPAC Pte. Ltd.Inventors: KyungOe Kim, Wagno Alves Braganca, JR., DongSam Park
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Patent number: 11688718Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.Type: GrantFiled: September 7, 2021Date of Patent: June 27, 2023Assignee: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, Jr., KyungOe Kim
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Patent number: 11670563Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.Type: GrantFiled: June 24, 2021Date of Patent: June 6, 2023Assignee: STATS ChipPAC Pte. Ltd.Inventors: KyungOe Kim, Wagno Alves Braganca, Jr., DongSam Park
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Publication number: 20230077132Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.Type: ApplicationFiled: September 7, 2021Publication date: March 9, 2023Applicant: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, JR., KyungOe Kim
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Publication number: 20220415744Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.Type: ApplicationFiled: June 24, 2021Publication date: December 29, 2022Applicant: STATS ChipPAC Pte. Ltd.Inventors: KyungOe Kim, Wagno Alves Braganca, JR., DongSam Park
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Publication number: 20220399236Abstract: A semiconductor device is formed by providing a semiconductor die. A laser-assisted bonding (LAB) assembly is disposed over the semiconductor die. The LAB assembly includes an infrared (IR) camera. The IR camera is used to capture an image of the semiconductor die. Image processing is performed on the image to identify corners of the semiconductor die. Regions of interest (ROI) are identified in the image relative to the corners of the semiconductor die. Parameters can be used to control the size and location of the ROI relative to the respective corners. The ROI are monitored for temperature using the IR camera while LAB is performed.Type: ApplicationFiled: June 9, 2021Publication date: December 15, 2022Applicant: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, JR., KyungOe Kim
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Publication number: 20210296268Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.Type: ApplicationFiled: October 12, 2020Publication date: September 23, 2021Applicant: STATS ChipPAC Pte. Ltd.Inventors: Wagno Alves Braganca, JR., KyungOe Kim, TaeKeun Lee