Abstract: The present disclosure relates to a method of singulation of dies from a wafer, the wafer includes a semiconductor layer and a coating applied to the backside of the wafer after backgrinding, and the coating includes at least one metallization layer, the dies being separated along saw streets running in multiple directions. The method includes the steps of: dicing the wafer along the saw streets from a topside of the wafer; and the dicing is performed through plasma dicing for a dicing depth corresponding to the interface between the semiconductor layer and the coating. The method further includes the step of: etching the wafer in accordance with an etch mask corresponding to the saw streets, for each of the remaining metallization layers in the coating, and for singulating the dies from the wafer.

Abstract: This disclosure relates to a new package concept that eliminates the need for epoxy or epoxy solder used in traditional clip/lead frame-based power packages. The disclosure overcomes this disadvantage in clip-based packages by depositing the interconnect structure directly to the bod pads. The formation of the interconnect done at lower temperature leads to lower stress induced onto the die. Another advantage of the present disclosure is that semiconductor dies packaged using a method according to the present disclosure will have smaller footprint as the pads are directly built up/deposited. Another advantage of the method according to the present disclosure is that it allows large scale, i.e., panel level processing. Such a panel may include multiple ICs, or transistor or any other semiconductor devices.

Abstract: This disclosure relates to a flank wettable semiconductor device, having: a lead frame including a plurality of leads with a lead end portion and a semiconductor die mounted on the lead frame. The lead end portion comprises a recess portion having a height that corresponds to a thickness of the lead end portion, and a plate member mounted on the leadframe at the lead end portion.

Abstract: This disclosure relates to a flank wettable semiconductor device, having: a lead frame including a plurality of leads with a lead end portion and a semiconductor die mounted on the lead frame. The lead end portion comprises a recess portion having a height that corresponds to a thickness of the lead end portion, and a plate member mounted on the leadframe at the lead end portion.

Abstract: A method of forming semiconductor devices on a leadframe structure. The leadframe structure comprising an array of leadframe sub-structures each having a semiconductor die arranged thereon. The method comprises; providing electrical connections between terminals of said lead frame sub-structures and said leadframe structure; encapsulating said leadframe structure, said electrical connections and said terminals in an encapsulation layer; performing a first series of parallel cuts extending through the leadframe structure and the encapsulation layer to expose a side portion of said terminals; electro-plating said terminals to form metal side pads; and performing a second series of parallel cuts angled with respect to the first series of parallel cuts, the second series of cuts extending through the lead frame structure and the encapsulation layer to singulate a semiconductor device from the leadframe structure.

Abstract: Consistent with an example embodiment, there is leadless packaged semiconductor device having top and bottom opposing major surfaces and sidewalls extending there between. The leadless packaged semiconductor device comprises a lead frame sub-assembly having an array of two or more lead frame portions each having a semiconductor die arranged thereon. There are at least five I/O terminals wherein each of said terminals comprise a respective metal side pad wherein the respective metal side pad is disposed in a recess. A feature of this embodiment is that the each of the side pads is electroplated. The electroplated side pads accept solder and the solder menisci are contained by the recesses.

Abstract: Consistent with an example embodiment, there is leadless packaged semiconductor device having top and bottom opposing major surfaces and sidewalls extending there between. The leadless packaged semiconductor device comprises a lead frame sub-assembly having an array of two or more lead frame portions each having a semiconductor die arranged thereon. There are at least five I/O terminals wherein each of said terminals comprise a respective metal side pad wherein the respective metal side pad is disposed in a recess. A feature of this embodiment is that the each of the side pads is electroplated. The electroplated side pads accept solder and the solder menisci are contained by the recesses.

Abstract: A method of forming semiconductor devices on a leadframe structure. The leadframe structure comprising an array of leadframe sub-structures each having a semiconductor die arranged thereon. The method comprises; providing electrical connections between terminals of said lead frame sub-structures and said leadframe structure; encapsulating said leadframe structure, said electrical connections and said terminals in an encapsulation layer; performing a first series of parallel cuts extending through the leadframe structure and the encapsulation layer to expose a side portion of said terminals; electro-plating said terminals to form metal side pads; and performing a second series of parallel cuts angled with respect to the first series of parallel cuts, the second series of cuts extending through the lead frame structure and the encapsulation layer to singulate a semiconductor device from the leadframe structure.