Abstract: A circuit for controlling a switch in a power converter in which peak current is regulated to achieve a specified average current through a load. Control logic is operable to monitor a voltage across a sensing resistor such that when the voltage across the sensing resistor reaches or exceeds a threshold value, the control logic generates a signal that causes a switch to be turned OFF.

Abstract: A circuit for controlling a switch in a power converter in which peak current is regulated to achieve a specified average current through a load. Control logic is operable to monitor a voltage across a sensing resistor such that when the voltage across the sensing resistor reaches or exceeds a threshold value, the control logic generates a signal that causes a switch to be turned OFF.

Abstract: A circuit for controlling a switch in a power converter in which peak current is regulated to achieve a specified average current through a load. The circuit can include a first input to receive a voltage corresponding to a pre-specified target average current through the load, and a second input to receive a voltage corresponding to a voltage across a sensing resistor immediately after the switch turns ON. The circuit generates a threshold value that is approximately equal to twice the voltage corresponding to the pre-specified target average current through the load, minus the voltage corresponding to a non-zero voltage across the sensing resistor just after the switch turns ON. Control logic is operable to monitor a voltage across the sensing resistor such that when the voltage across the sensing resistor reaches or exceeds the threshold value, the control logic generates a signal that causes the switch to be turned OFF.

Abstract: An integrated circuit is operable for implementing any of multiple switched mode or linear power control topologies. The integrated circuit includes a control unit, and functional blocks each of which includes circuitry. The control unit is operable selectively to enable particular ones of the functional blocks in response to an input signal indicative of a particular one of the switched mode or linear mode power control topologies.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor. The low voltage controller integrated circuit and the high voltage, vertical, discrete field effect transistor are packaged together in a single package on a common electrically conductive die pad, wherein the controller IC is attached to the die pad using insulating adhesive and the FET is attached to the die pad using conductive adhesive.

Abstract: A circuit for controlling a switch in a power converter in which peak current is regulated to achieve a specified average current through a load. The circuit can include a first input to receive a voltage corresponding to a pre-specified target average current through the load, and a second input to receive a voltage corresponding to a voltage across a sensing resistor immediately after the switch turns ON. The circuit generates a threshold value that is approximately equal to twice the voltage corresponding to the pre-specified target average current through the load, minus the voltage corresponding to a non-zero voltage across the sensing resistor just after the switch turns ON. Control logic is operable to monitor a voltage across the sensing resistor such that when the voltage across the sensing resistor reaches or exceeds the threshold value, the control logic generates a signal that causes the switch to be turned OFF.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. The bottom cathode is electrically connected to the common die pad. It is emphasized that this abstract is being provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor. The low voltage controller integrated circuit and the high voltage, vertical, discrete field effect transistor are packaged together in a single package on a common electrically conductive die pad, wherein the controller IC is attached to the die pad using insulating adhesive and the FET is attached to the die pad using conductive adhesive.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package on separate electrically isolated die pads.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. The bottom cathode is electrically connected to the common die pad. It is emphasized that this abstract is being provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package on separate electrically isolated die pads.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

Abstract: A current limiting load switch for bridging supply Vss and load with a reference voltage VRdt dynamically generated by a VRdt-generator is proposed. It includes: A pair of power FET and sense FET interconnected in split-current configuration. The FET pair develops a load voltage while limiting load current Iload to a preset maximum Imax. The FET pair is sized to draw device currents Ipower and Is with RATIOI=Is/Ipower<<1. The sense FET high-side terminal is coupled to Vss through a sense resistor Rsense developing a sense voltage Vs=Is×Rsense. A current limiting amplifier with inputs connected to VRdt and Vs and output controlling FET pair closing a current limiting feedback loop. The VRdt-generator dynamically adjusts VRdt concurrent and compensatory with an undesirable effect of changing RATIOI caused by the sense FET operational transition thus eliminating a transitional overshoot of Iload beyond Imax.

Abstract: A current limiting load switch for bridging supply Vss and load with a reference voltage VRdt dynamically generated by a VRdt-generator is proposed. It includes: A pair of power FET and sense FET interconnected in split-current configuration. The FET pair develops a load voltage while limiting load current Iload to a preset maximum Imax. The FET pair is sized to draw device currents Ipower and Is with RATIOI=Is/Ipower<<1. The sense FET high-side terminal is coupled to Vss through a sense resistor Rsense developing a sense voltage Vs=Is×Rsense. A current limiting amplifier with inputs connected to VRdt and Vs and output controlling FET pair closing a current limiting feedback loop. The VRdt-generator dynamically adjusts VRdt concurrent and compensatory with an undesirable effect of changing RATIOI caused by the sense FET operational transition thus eliminating a transitional overshoot of Iload beyond Imax.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

Abstract: A DC-DC boost converter in multi-die package is proposed having an output Schottky diode and a low-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a single die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the single die pad via an insulating die bond. Alternatively, the single die pad is grounded. The vertical MOSFET is a top drain vertical N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the single die pad. The PRC is attached atop the single die pad via a standard conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.