Abstract: A liquid crystal display device includes: a liquid crystal layer; a first substrate including thin-film transistors configured to drive liquid crystal molecules of the liquid crystal layer, at least one type of electrode, and an insulating film, at least a part of which is in direct contact with the liquid crystal layer; and a second substrate disposed so as to be opposed to the first substrate with the liquid crystal layer interposed therebetween. One of the at least one type of electrode is disposed on the insulating film. The insulating film has a function of aligning the liquid crystal molecules of the liquid crystal layer. The insulating film formed on the thin-film transistors also serves as an alignment film configured to align the liquid crystal molecules and the structure is simplified more than before. The manufacturing process is also simplified more than before.

Abstract: A novel transfer material is disclosed. The transfer material comprises, at least, a support, and, thereon, an optically uniaxial or biaxial anisotropic layer and a photosensitive polymer layer. A novel process for producing a liquid crystal cell substrate is also disclosed. The process comprises, at least, [1] laminating a transfer material as set forth in any one of claims 1 to 11 on a substrate; [2] removing the support from the transfer material laminated on the substrate; and [3] exposing the photosensitive polymer layer disposed on the substrate to light.

Abstract: A process for easy production of a liquid crystal cell substrate having a TFT driver element which contributes to reducing viewing angle dependence of color of a liquid crystal display device is provided: a process using a transfer material, more preferably, a process which comprises the following steps [1] to [4] in this order: [1] transferring on a TFT substrate a transfer material having a photosensitive polymer layer and an optically anisotropic layer on a temporary support; [2] separating the temporary support from the transfer material on the TFT substrate; [3] subjecting the transfer material to light exposure on the TFT substrate; and [4] removing unnecessary parts of the photosensitive polymer layer and the optically anisotropic layer on the substrate.

Abstract: A black matrix (10) is formed on a transparent substrate (3), and micro color filters (12) are formed to partially overlap on the black matrix (10). The thickness of the black matrix (10) is gradually increased from an opening rim (10a) thereof to a plane portion (10b) thereof. The plane portion (10b) has substantially uniform thickness. A cross-sectional line of the thickness increasing portion of the black matrix (10) has convex curve portions P1 and P3, and a concave curve portion P2. The thickness of the black matrix (10) is controlled such that the cross-sectional line of the thickness increasing portion is kept under a tangent line contacting with both the convex curve portions P1 and P3.

Abstract: A process for easy production of a liquid crystal cell substrate having a TFT driver element which contributes to reducing viewing angle dependence of color of a liquid crystal display device is provided: a process using a transfer material, more preferably, a process which comprises the following steps [1] to [4] in this order: [1] transferring on a TFT substrate a transfer material having a photosensitive polymer layer and an optically anisotropic layer on a temporary support; [2] separating the temporary support from the transfer material on the TFT substrate; [3] subjecting the transfer material to light exposure on the TFT substrate; and [4] removing unnecessary parts of the photosensitive polymer layer and the optically anisotropic layer on the substrate.

Abstract: A novel transfer material is disclosed. The transfer material comprises, at least, a support, and, thereon, an optically uniaxial or biaxial anisotropic layer and a photosensitive polymer layer. A novel process for producing a liquid crystal cell substrate is also disclosed. The process comprises, at least, [1] laminating a transfer material as set forth in any one of claims 1 to 11 on a substrate; [2] removing the support from the transfer material laminated on the substrate; and [3] exposing the photosensitive polymer layer disposed on the substrate to light.

Abstract: A liquid crystal display device includes first and second electrodes and an insulating film. The first electrode is formed on a substrate as one of two electrodes of an accumulation capacitor and applied with a voltage. The insulating film is formed on the first electrode to cover the first electrode. The second electrode is formed on the first electrode via the insulating film as the other electrode of the accumulation capacitor and including a first conductive film and a second conductive film formed on the first conductive film.

Abstract: A semi-transmissive liquid crystal display device of the present invention is so configured that a diffraction film and a light scattering layer are provided on a color-filter substrate on the side thereof on which a display screen resides, and the light scattering layer is disposed nearer a liquid crystal layer than the diffraction film. The semi-transmissive liquid crystal display device thus configured has improved viewing-angle characteristics in the transmissive mode.

Abstract: An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer.

Abstract: A method for fabricating an active matrix LCD panel for use in an active matrix LCD device includes the step of forming a passivation layer acting as a channel protection layer for protecting an amorphous silicon active layer, thereby reducing the number of photolithographic steps. A transparent conductive film is used for forming a gate electrode and a pixel electrode before formation of an amorphous silicon film for the TFTs.

Abstract: An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer.

Abstract: An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer.

Abstract: A semi-transmissive liquid crystal display device of the present invention is so configured that a diffraction film and a light scattering layer are provided on a color-filter substrate on the side thereof on which a display screen resides, and the light scattering layer is disposed nearer a liquid crystal layer than the diffraction film. The semi-transmissive liquid crystal display device thus configured has improved viewing-angle characteristics in the transmissive mode.

Abstract: In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

Abstract: In a liquid crystal display apparatus including a plurality of gate lines, a plurality of drain lines, and a plurality of pixels each including a liquid crystal cell having a pixel electrode connected to a storage capacitor and a switching element connected between the liquid crystal cell and one of the drain lines, a gate of the switching element is connected to one of the gate lines, and a capacitance of the storage capacitor is changed in accordance with a distance between said pixel and an input end of a corresponding one of the gate lines.

Abstract: In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

Abstract: In a method for manufacturing a thin film transistor, an upper portion of a channel region of an a--Si active layer is selectively etched using the source electrode and the drain electrode as a mask, so as to form a recess in the upper portion of the channel region of the active layer. Hydrogen plasma is irradiated to an exposed surface including a surface of the active layer, and succeedingly, an amorphous silicon film is deposited on the exposed surface including the surface of the active layer, and then patterned so as to form a light block film which also acts a protection layer.

Abstract: A lower layer metal wiring is led out from a display portion to a terminal portion provided to the periphery of the glass substrate and covered at the upper surface with an interlayer insulation film. An upper layer metal wiring formed on the interlayer insulation film is connected to the lower layer metal wiring by way of contact holes formed in the interlayer insulation film. The upper layer metal wiring is completely covered by the transparent conductive film. A protective insulation film is formed on the transparent conductive film, and an opening is made in to the protective insulation film in the terminal portion. In the terminal portion, copper foil wirings of a flexible wiring substrate are connected by way of an anisotropic conductive film. The upper layer metal wiring is removed at a portion not protected by the protective insulation film or the anisotropic conductive film.