Patents by Inventor Waki Ohkubo

Waki Ohkubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7858286
    Abstract: A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: December 28, 2010
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yohei Kinoshita, Makiko Irie, Waki Ohkubo, Yusuke Nakagawa, Shinichi Hidesaka
  • Patent number: 7781144
    Abstract: The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n? represents either 0 or an integer from 1 to 3].
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: August 24, 2010
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yohei Kinoshita, Waki Ohkubo, Yusuke Nakagawa, Shinichi Hidesaka, Makiko Irie
  • Publication number: 20090098483
    Abstract: A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained.
    Type: Application
    Filed: April 7, 2006
    Publication date: April 16, 2009
    Applicant: TOKYO OHA KOGYO CO., LTD.
    Inventors: Yohei Kinoshita, Makiko Irie, Waki Ohkubo, Yusuke Nakagawa, Shinichi Hidesaka
  • Publication number: 20090035698
    Abstract: The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n? represents either 0 or an integer from 1 to 3].
    Type: Application
    Filed: April 18, 2006
    Publication date: February 5, 2009
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yohei Kinoshita, Waki Ohkubo, Yusuke Nakagawa, Shinichi Hidesaka, Makiko Irie
  • Patent number: 7192687
    Abstract: A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (?-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 ?/second, as well as a method of forming a resist pattern that uses such a composition; (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group).
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: March 20, 2007
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Kazuyuki Nitta, Waki Ohkubo, Satoshi Shimatani
  • Publication number: 20050079445
    Abstract: A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (?-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 ?/second, as well as a method of forming a resist pattern that uses such a composition.
    Type: Application
    Filed: September 1, 2004
    Publication date: April 14, 2005
    Inventors: Kazuyuki Nitta, Waki Ohkubo, Satoshi Shimatani
  • Patent number: 6180313
    Abstract: Disclosed is a poly(disulfonyl diazomethane) compound as a class of novel compounds represented by the general formula R-SO2-C(N2)-SO2&Brketopenst; Z-SO2-C(N2)-SO2&Brketclosest; nR in which the subscript n is 1 to 5, each R is a monovalent hydrocarbon group and Z is a divalent hydrocarbon group. The invention also discloses a chemical-amplification positive-working photoresist composition which comprises the above mentioned poly(disulfonyl diazomethane) compound as the radiation-sensitive acid-generating agent in combination with a film-forming resin capable of being imparted with increased solubility in an aqueous alkaline solution by the interaction with an acid, such as a polyhydroxystyrene resin of which a part of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups, e.g., tert-butoxycarbonyl groups.
    Type: Grant
    Filed: August 27, 1999
    Date of Patent: January 30, 2001
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Hiroto Yukawa, Waki Ohkubo, Kouki Tamura
  • Patent number: 6153733
    Abstract: Disclosed is a poly(disulfonyl diazomethane) compound as a class of novel compounds represented by the general formula ##STR1## in which the subscript n is 1 to 5, each R is a monovalent hydrocarbon group and Z is a divalent hydrocarbon group. The invention also discloses a chemical-amplification positive-working photoresist composition which comprises the above mentioned poly(disulfonyl diazomethane) compound as the radiation-sensitive acid-generating agent in combination with a film-forming resin capable of being imparted with increased solubility in an aqueous alkaline solution by the interaction with an acid, such as a polyhydroxystyrene resin of which a part of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups, e.g., tert-butoxycarbonyl groups.
    Type: Grant
    Filed: May 13, 1999
    Date of Patent: November 28, 2000
    Assignees: Tokyo Ohka Kogyo Co., Ltd., Daito Chemix Corporation
    Inventors: Hiroto Yukawa, Waki Ohkubo, Kouki Tamura, Toshiharu Shimamaki, Kei Mori