Abstract: The invention relates to the fabrication of thin-film transistors made of amorphous silicon and of polycrystalline silicon on one and the same substrate. A polycrystalline silicon island (12) is formed, an insulating layer (14) and a first conducting layer (16) are deposited and these two layers are etched to the same pattern so as to simultaneously define a first insulated gate on top of the island and a second gate away from the island. The polycrystalline silicon is doped in order to form the source and the drain of a polycrystalline silicon first transistor (gate above the channel). An insulating layer (18) forming the gate insulator of an amorphous silicon transistor (gate beneath the channel) is deposited. The fabrication of the amorphous silicon transistor then continues with the deposition and etching of undoped amorphous silicon (20) and doped silicon (22), etching of the insulating layer (18) and deposition and etching of interconnect metal (28). The invention is applicable to LCD, LED and OLED.

Abstract: The invention relates to a microelectronic device for producing light radiation according to a wide luminance range which can be used, in particular for forming improved screen pixels or, for example OLED-type display pixels.

Abstract: The invention relates to a microelectronic device for producing light radiation according to a wide luminance range which can be used, in particular for forming improved screen pixels or, for example OLED-type display pixels.

Abstract: The pixel addressing circuit comprises two actuating transistors connected in series with a same diode to the terminals of a supply voltage, and two switching transistors each comprising a gate and respectively connected between data signals and the gate of the associated actuating transistors. The gates of the switching transistors are connected to two distinct outputs of a control circuit supplying them with different addressing voltages. The method for controlling the addressing circuit consists in applying addressing voltages to the gates of the switching transistors, which voltages are able to respectively turn the associated actuating transistors off and on so as to make one of the actuating transistors switch to an addressing and control phase of the diode and to make the other actuating transistor switch to a repair phase.

Abstract: A microelectronic device with which light radiation may be produced, notably used for forming enhanced pixels of screens or displays of the OLED type for example.