Patents by Inventor Walter B. Meinel
Walter B. Meinel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9921110Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.Type: GrantFiled: June 6, 2016Date of Patent: March 20, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Walter B. Meinel, Kalin Lazarov
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Publication number: 20160282189Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.Type: ApplicationFiled: June 6, 2016Publication date: September 29, 2016Inventors: Walter B. Meinel, Kalin Lazarov
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Patent number: 9417133Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.Type: GrantFiled: November 6, 2013Date of Patent: August 16, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Walter B. Meinel, Kalin V. Lazarov
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Patent number: 9360376Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.Type: GrantFiled: February 5, 2014Date of Patent: June 7, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Walter B. Meinel, Kalin Lazarov
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Patent number: 9157807Abstract: A semiconductor device includes a semiconductor layer (2) and a dielectric stack (3) on the semiconductor layer. A plurality of etchant openings (24-1,2 . . . ) are formed through the dielectric stack (3) for passage of etchant for etching a plurality of overlapping sub-cavities (4-1,2 . . . ), respectively. The etchant is introduced through the etchant openings to etch a composite cavity (4) in the semiconductor layer by simultaneously etching the plurality of overlapping sub-cavities into the semiconductor layer.Type: GrantFiled: June 24, 2009Date of Patent: October 13, 2015Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Walter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Publication number: 20140151559Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.Type: ApplicationFiled: February 5, 2014Publication date: June 5, 2014Applicant: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin Lazarov
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Publication number: 20140131577Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.Type: ApplicationFiled: November 6, 2013Publication date: May 15, 2014Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Walter B. Meinel, Kalin V. Lazarov
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Patent number: 8607631Abstract: An inertial sensor (16) includes a differential thermocouple (13) including first (4A) and second (4B) metal traces, a poly trace (6) with a first end connected to a first end of the first metal trace to form a first (?) thermocouple junction and a second end connected to a first end of the second metal trace to form a second (+) thermocouple junction. A gas mass (10) located symmetrically with respect to the thermocouple junctions is heated by a heater (8). Acceleration or tilting of the sensor shifts the relative location of the gas mass relative to the thermocouple junctions, causing differential heating thereof and generation of a corresponding thermocouple output signal.Type: GrantFiled: April 22, 2011Date of Patent: December 17, 2013Assignee: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov
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Patent number: 8604435Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.Type: GrantFiled: February 26, 2009Date of Patent: December 10, 2013Assignee: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov
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Patent number: 8304850Abstract: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element (8). Bonding pads (28A) on the chip (1) are coupled to the first and second temperature-sensitive elements. Bump conductors (28) are bonded to the bonding pads (28A), respectively, for physically and electrically connecting the radiation sensor chip (1) to corresponding mounting conductors (23A). A diffractive optical element (21,22,23,31,32 or 34) is integrated with a back surface (25) of the radiation sensor chip (1) to direct IR radiation toward the first temperature-sensitive element (7).Type: GrantFiled: December 22, 2009Date of Patent: November 6, 2012Assignee: Texas Instruments IncorporatedInventors: Kalin V. Lazarov, Walter B. Meinel
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Publication number: 20120266672Abstract: An inertial sensor (16) includes a differential thermocouple (13) including first (4A) and second (4B) metal traces, a poly trace (6) with a first end connected to a first end of the first metal trace to form a first (?) thermocouple junction and a second end connected to a first end of the second metal trace to form a second (+) thermocouple junction. A gas mass (10) located symmetrically with respect to the thermocouple junctions is heated by a heater (8). Acceleration or tilting of the sensor shifts the relative location of the gas mass relative to the thermocouple junctions, causing differential heating thereof and generation of a corresponding thermocouple output signal.Type: ApplicationFiled: April 22, 2011Publication date: October 25, 2012Inventors: Walter B. Meinel, Kalin V. Lazarov
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Publication number: 20120200486Abstract: A system for generating tracking coordinate information in response to movement of an information-indicating element includes an array (55) of IR sensors (60-x,y) disposed along a surface (55A) of the array. Each IR sensor includes first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3) of a radiation sensor chip (1). The first thermopile junction is more thermally insulated from a substrate (2) of the radiation sensor chip than the second thermopile junction. A sensor output signal between the first and second thermopile junctions is coupled to a bus (63). A processing device (64) is coupled to the bus for operating on information representing temperature differences between the first and second thermopile junctions of the various IR sensors, respectively, caused by the presence of the information-indicating element to produce the tracking coordinate information as the information-indicating element moves along the surface.Type: ApplicationFiled: February 9, 2011Publication date: August 9, 2012Inventors: Walter B. Meinel, Kalin V. Lazarov, Timothy V. Kalthoff
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Publication number: 20120138800Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.Type: ApplicationFiled: February 14, 2012Publication date: June 7, 2012Applicant: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov
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Patent number: 8129682Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.Type: GrantFiled: February 26, 2009Date of Patent: March 6, 2012Assignee: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov
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Patent number: 8115272Abstract: An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.Type: GrantFiled: August 11, 2011Date of Patent: February 14, 2012Assignee: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Patent number: 8114779Abstract: An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.Type: GrantFiled: August 11, 2011Date of Patent: February 14, 2012Assignee: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Publication number: 20110294246Abstract: An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.Type: ApplicationFiled: August 11, 2011Publication date: December 1, 2011Applicant: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Publication number: 20110291222Abstract: An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.Type: ApplicationFiled: August 11, 2011Publication date: December 1, 2011Applicant: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Patent number: 8026177Abstract: A semiconductor device includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.Type: GrantFiled: May 14, 2009Date of Patent: September 27, 2011Assignee: Texas Instruments IncorporatedInventors: Walter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Publication number: 20110147869Abstract: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element (8). Bonding pads (28A) on the chip (1) are coupled to the first and second temperature-sensitive elements. Bump conductors (28) are bonded to the bonding pads (28A), respectively, for physically and electrically connecting the radiation sensor chip (1) to corresponding mounting conductors (23A). A diffractive optical element (21,22,23,31,32 or 34) is integrated with a back surface (25) of the radiation sensor chip (1) to direct IR radiation toward the first temperature-sensitive element (7).Type: ApplicationFiled: December 22, 2009Publication date: June 23, 2011Applicant: Texas Instruments IncorporatedInventors: Kalin V. Lazarov, Walter B. Meinel