Patents by Inventor Walter H. Riess
Walter H. Riess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9230830Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.Type: GrantFiled: February 9, 2015Date of Patent: January 5, 2016Assignee: International Business Machines CorporationInventors: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf
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Patent number: 9121108Abstract: A method for positioning nano-objects on a surface and an apparatus for implementing the method. The method includes: providing a first surface and a second surface in a position facing each other, where one or more of the surfaces exhibits one or more position structures having dimensions on the nanoscale; providing an ionic liquid suspension of the nano-objects between the two surfaces, where the suspension comprises two electrical double layers each formed at an interface with a respective one of the two surfaces, and the surfaces have electrical charges of the same sign; enabling the nano-objects in the suspension to position according to a potential energy resulting from the electrical charge of the two surfaces; and depositing one or more of the nano-objects on the first surface according to the positioning structures by shifting the minima of the potential energy towards the first surface.Type: GrantFiled: April 26, 2013Date of Patent: September 1, 2015Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Urs T Duerig, Felix Holzner, Armin W Knoll, Walter H Riess
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Publication number: 20150155186Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.Type: ApplicationFiled: February 9, 2015Publication date: June 4, 2015Inventors: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf
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Patent number: 8951445Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.Type: GrantFiled: April 3, 2012Date of Patent: February 10, 2015Assignee: International Business Machines CorporationInventors: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf
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Publication number: 20130284598Abstract: A method for positioning nano-objects on a surface and an apparatus for implementing the method. The method includes: providing a first surface and a second surface in a position facing each other, where one or more of the surfaces exhibits one or more position structures having dimensions on the nanoscale; providing an ionic liquid suspension of the nano-objects between the two surfaces, where the suspension comprises two electrical double layers each formed at an interface with a respective one of the two surfaces, and the surfaces have electrical charges of the same sign; enabling the nano-objects in the suspension to position according to a potential energy resulting from the electrical charge of the two surfaces; and depositing one or more of the nano-objects on the first surface according to the positioning structures by shifting the minima of the potential energy towards the first surface.Type: ApplicationFiled: April 26, 2013Publication date: October 31, 2013Inventors: Urs T. Duerig, Felix Holzner, Armin W. Knoll, Walter H. Riess
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Publication number: 20120261819Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.Type: ApplicationFiled: April 3, 2012Publication date: October 18, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf
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Patent number: 8288803Abstract: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.Type: GrantFiled: August 31, 2009Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Paul M. Solomon
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Patent number: 8212269Abstract: The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.Type: GrantFiled: October 21, 2005Date of Patent: July 3, 2012Assignee: International Business Machines CorporationInventors: Siegfried F. Karg, Hajime Nakamura, Heike E. Riel, Walter H. Riess, Constance Rost-Bietsch
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Patent number: 8129763Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.Type: GrantFiled: February 7, 2008Date of Patent: March 6, 2012Assignee: International Business Machines CorporationInventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Heinz Schmid
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Patent number: 8049207Abstract: A method for manufacturing an organic electronic device including a stack of layers including a release layer, the stack having a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.Type: GrantFiled: October 3, 2007Date of Patent: November 1, 2011Assignee: International Business Machines CorporationInventors: Siegfried F. Karg, Bruno Michel, Heike E. Riel, Walter H. Riess
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Patent number: 8022447Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.Type: GrantFiled: July 16, 2009Date of Patent: September 20, 2011Assignee: International Business Machines CorporationInventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Heinz Schmid
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Publication number: 20110049474Abstract: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.Type: ApplicationFiled: August 31, 2009Publication date: March 3, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Reil, Walter H. Riess, Paul M. Solomon
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Patent number: 7759729Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.Type: GrantFiled: February 7, 2008Date of Patent: July 20, 2010Assignee: International Business Machines CorporationInventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Heinz Schmid
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Patent number: 7686886Abstract: A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.Type: GrantFiled: September 26, 2006Date of Patent: March 30, 2010Assignee: International Business Machines CorporationInventors: Walter H Riess, Heike E Riel, Siegfried F Karg, Heinz Schmid
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Publication number: 20100001301Abstract: The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.Type: ApplicationFiled: October 21, 2005Publication date: January 7, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Siegfried F. Karg, Hajime Nakamura, Heike E. Riel, Walter H. Riess, Constance Rost-Bietsch
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Publication number: 20090273011Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.Type: ApplicationFiled: July 16, 2009Publication date: November 5, 2009Applicant: International Business Machines CorporationInventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Heinz Schmid
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Publication number: 20090200605Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.Type: ApplicationFiled: February 7, 2008Publication date: August 13, 2009Inventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Heinz Schmid
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Publication number: 20090200540Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.Type: ApplicationFiled: February 7, 2008Publication date: August 13, 2009Inventors: Mikael T. Bjoerk, Siegfried F. Karg, Joachim Knoch, Heike E. Riel, Walter H. Riess, Heinz Schmid
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Patent number: 7466579Abstract: A field effect device includes a source electrode, a drain electrode spaced laterally apart from the source electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode separated from the channel by an insulating layer. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state by at least one of: (i) application of a predetermined voltage between the source electrode and the drain electrode or between the gate electrode and at least one of the source electrode and the drain electrode, (ii) application of a voltage or a current to the switching material in the channel, and (iii) application of at least one of heat and light. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.Type: GrantFiled: August 31, 2006Date of Patent: December 16, 2008Assignee: International Business Machines CorporationInventors: Georg J. Bednorz, David J. Gundlach, Siegfried F. Karg, Gerhard J. Meijer, Heike E. Riel, Walter H. Riess
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Publication number: 20080251777Abstract: A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.Type: ApplicationFiled: May 14, 2008Publication date: October 16, 2008Applicant: International Business Machines CorporationInventors: Georg J. Bednorz, David J. Gundlach, Siegfried F. Karg, Gerhard I. Meijer, Heike E. Riel, Walter H. Riess