Patents by Inventor Walter Mieher
Walter Mieher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10024654Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.Type: GrantFiled: April 5, 2016Date of Patent: July 17, 2018Assignee: KLA-Tencor CorporationInventors: Mark D. Smith, Jose Solomon, Stuart Sherwin, Walter Mieher, Ady Levy
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Patent number: 9470639Abstract: Methods and systems for performing broadband spectroscopic metrology with reduced sensitivity to grating anomalies are presented herein. A reduction in sensitivity to grating anomalies is achieved by selecting a subset of available system parameter values for measurement analysis. The reduction in sensitivity to grating anomalies enables an optimization of any combination of precision, sensitivity, accuracy, system matching, and computational effort. These benefits are particularly evident in optical metrology systems having large ranges of available azimuth angle, angle of incidence, illumination wavelength, and illumination polarization. Predictions of grating anomalies are determined based on a measurement model that accurately represents the interaction between the measurement system and the periodic metrology target under measurement. A subset of available system parameter values is selected to reduce the impact of grating anomalies on measurement results.Type: GrantFiled: February 3, 2016Date of Patent: October 18, 2016Assignee: KLA-Tencor CorporationInventors: Guorong V. Zhuang, Shankar Krishnan, Lanhua Wei, Walter Mieher, Paul Aoyagi
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Publication number: 20160290789Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.Type: ApplicationFiled: April 5, 2016Publication date: October 6, 2016Inventors: Mark D. Smith, Jose Solomon, Stuart Sherwin, Walter Mieher, Ady Levy
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Publication number: 20120281275Abstract: Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.Type: ApplicationFiled: July 19, 2012Publication date: November 8, 2012Applicant: KLA-TENCOR CORPORATIONInventors: Ady Levy, Samuel Ngai, Christopher F. Bevis, Stefano Concina, John Fielden, Walter Mieher, Dieter Mueller, Neil Richardson, Dan Wack, Larry Wagner
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Patent number: 7826071Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: GrantFiled: October 8, 2007Date of Patent: November 2, 2010Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Publication number: 20100235114Abstract: Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.Type: ApplicationFiled: March 10, 2009Publication date: September 16, 2010Applicant: KLA-TENCOR CORPORATIONInventors: Ady Levy, Samuel Ngai, Christopher F. Bevis, Stefano Concina, John Fielden, Walter Mieher, Dieter Mueller, Neil Richardson, Dan Wack, Larry Wagner
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Publication number: 20090135416Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: ApplicationFiled: October 8, 2007Publication date: May 28, 2009Applicant: KLA-Tencor Technologies CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Publication number: 20080192221Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: ApplicationFiled: April 11, 2008Publication date: August 14, 2008Applicant: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Thaddeus G. Dziura, Ady Levy, Chris A. Mack
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Patent number: 7382447Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: GrantFiled: June 26, 2002Date of Patent: June 3, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Thaddeus G. Dziura, Ady Levy, Chris A. Mack
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Publication number: 20080094630Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.Type: ApplicationFiled: December 21, 2007Publication date: April 24, 2008Applicant: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher Bevis, John Fielden, Noah Bareket, Kenneth Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus Dziura, Mark Ghinovker
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Publication number: 20080049226Abstract: Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.Type: ApplicationFiled: October 29, 2007Publication date: February 28, 2008Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Walter Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant
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Publication number: 20080023855Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: ApplicationFiled: July 30, 2007Publication date: January 31, 2008Inventors: Mark Ghinovker, Michael Adel, Walter Mieher, Ady Levy, Dan Wack
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Publication number: 20080024766Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.Type: ApplicationFiled: July 30, 2007Publication date: January 31, 2008Inventors: Walter Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher Bevis, Mark Ghinovker
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Patent number: 7280230Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: GrantFiled: December 19, 2002Date of Patent: October 9, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Publication number: 20070108368Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system.Type: ApplicationFiled: December 28, 2006Publication date: May 17, 2007Applicant: KLA-Tencor CorporationInventors: Walter Mieher, Daniel Wack, Ady Levy
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Publication number: 20060204073Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: ApplicationFiled: May 12, 2006Publication date: September 14, 2006Inventors: Mark Ghinovker, Michael Adel, Walter Mieher, Ady Levy, Dan Wack
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Publication number: 20060177120Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: ApplicationFiled: March 30, 2006Publication date: August 10, 2006Inventors: Mark Ghinovker, Michael Adel, Walter Mieher, Ady Levy, Dan Wack
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Publication number: 20050208391Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system.Type: ApplicationFiled: March 16, 2005Publication date: September 22, 2005Inventors: Walter Mieher, Daniel Wack, Ady Levy
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Publication number: 20040070772Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: ApplicationFiled: December 19, 2002Publication date: April 15, 2004Inventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Publication number: 20030048458Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: ApplicationFiled: June 26, 2002Publication date: March 13, 2003Inventors: Walter Mieher, Thaddeus G. Dziura, Ady Levy, Chris A. Mack