Patents by Inventor Walter R. Runyan

Walter R. Runyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Discretionary gettering of semiconductor circuits
    Patent number: 5250445
    Abstract: A semiconductor wafer (32) is patterned to have gettering areas (36-38) selectively positioned proximate devices (44-46) which require gettering. The areas (36-38) comprise germanium-doped silicon having a germanium concentration of approximately 1.5%-2.0%. The germanium creates a lattice mismatch between the substrate (32) and an epitaxial layer (34) which is sufficient to produce defects capable of gettering contaminants. The gettering areas (36-38) may be formed by selective deposition, selective etching, ion-implantation or selective diffusion techniques.
    Type: Grant
    Filed: January 17, 1992
    Date of Patent: October 5, 1993
    Assignee: Texas Instruments Incorporated
    Inventors: Kenneth E. Bean, Satwinder S. Malhi, Walter R. Runyan