Patents by Inventor Walter V. Lepuschenko

Walter V. Lepuschenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of reconstructing electrical probes
    Patent number: 9435828
    Abstract: A probe, comprising: a shank region having a top surface integrally connected to a bottom surface of a conical region; a pyramidal tip region having a base surface integrally connected to a top surface of the conical region; and wherein the base surface of the pyramidal tip region is contained within a perimeter of the top surface of the conical region. Also a method of fabricating the probe and a method of probing devices under test.
    Type: Grant
    Filed: May 23, 2013
    Date of Patent: September 6, 2016
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: David R. Goulet, Walter V. Lepuschenko
  • Method of Reconstructing Electrical Probes
    Publication number: 20140347038
    Abstract: A probe, comprising: a shank region having a top surface integrally connected to a bottom surface of a conical region; a pyramidal tip region having a base surface integrally connected to a top surface of the conical region; and wherein the base surface of the pyramidal tip region is contained within a perimeter of the top surface of the conical region. Also a method of fabricating the probe and a method of probing devices under test.
    Type: Application
    Filed: May 23, 2013
    Publication date: November 27, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David R. Goulet, Walter V. Lepuschenko
  • Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing
    Patent number: 8749057
    Abstract: Methods for forming structures to use in atomic force probing of a conductive feature embedded in a dielectric layer and structures for use in atomic force probing. An insulator layer is formed on the dielectric layer such that the conductive feature is covered. A contact hole penetrates from a top surface of the insulator layer through the insulator layer to the conductive feature. The contact hole is at least partially filled with a conductive stud that is in electrical contact with the conductive feature and exposed at the top surface of the insulator layer so as to define a structure. A probe tip of an atomic force probe tool is landed on a portion of the structure and used to electrically characterize a device structure connected with the conductive feature.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: June 10, 2014
    Assignee: International Business Machines Corporation
    Inventors: David R. Goulet, Walter V. Lepuschenko
  • Methods of Forming Structures with a Focused ION Beam for Use in Atomic Force Probing and Structures for Use in Atomic Force Probing
    Publication number: 20110193085
    Abstract: Methods for forming structures to use in atomic force probing of a conductive feature embedded in a dielectric layer and structures for use in atomic force probing. An insulator layer is formed on the dielectric layer such that the conductive feature is covered. A contact hole penetrates from a top surface of the insulator layer through the insulator layer to the conductive feature. The contact hole is at least partially filled with a conductive stud that is in electrical contact with the conductive feature and exposed at the top surface of the insulator layer so as to define a structure. A probe tip of an atomic force probe tool is landed on a portion of the structure and used to electrically characterize a device structure connected with the conductive feature.
    Type: Application
    Filed: February 10, 2010
    Publication date: August 11, 2011
    Applicant: International Business Machines Corporation
    Inventors: David R. Goulet, Walter V. Lepuschenko