Patents by Inventor Walter Vladimir Cicha
Walter Vladimir Cicha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090321721Abstract: The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.Type: ApplicationFiled: April 25, 2007Publication date: December 31, 2009Applicant: General Electric CompanyInventors: Patrick Roland Lucien Malenfant, Ji-Ung Lee, Yun Li, Walter Vladimir Cicha
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Patent number: 7247670Abstract: A nanostructure having at least one nanotube and at least one chemical moiety non-covalently attached to the at least one nanotube. At least one dendrimer is bonded to the chemical moiety. The chemical moiety may include soluble polymers, soluble oligomers, and combinations thereof. A method of dispersing at least one nanotube is also described. The method includes providing at least one nanotube and at least one chemical moiety to a solvent; debundling the nanotube; and non-covalently attaching a chemical moiety to the nanotube, wherein the non-covalently attached chemical moiety disperses the nanotube. A method of separating at least one semi-conducting carbon nanotube is also described.Type: GrantFiled: August 24, 2004Date of Patent: July 24, 2007Assignee: General Electric CompanyInventors: Patrick Roland Lucien Malenfant, Walter Vladimir Cicha, Pierre-Andre Bui, Davide Louis Simone
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Patent number: 7226818Abstract: The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.Type: GrantFiled: October 15, 2004Date of Patent: June 5, 2007Assignee: General Electric CompanyInventors: Patrick Roland Lucien Malenfant, Ji-Ung Lee, Yun Li, Walter Vladimir Cicha
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Patent number: 6500984Abstract: A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.Type: GrantFiled: January 25, 2002Date of Patent: December 31, 2002Assignee: General Electric CompanyInventors: Francis Anthony Via, Grigorii Lev Soloveichlk, Philip George Kosky, Walter Vladimir Cicha
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Publication number: 20020188156Abstract: A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.Type: ApplicationFiled: January 25, 2002Publication date: December 12, 2002Inventors: Francis Anthony Via, Grigorii Lev Soloveichik, Philip George Kosky, Walter Vladimir Cicha
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Patent number: 6399823Abstract: A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.Type: GrantFiled: April 30, 2001Date of Patent: June 4, 2002Assignee: General Electric CompanyInventors: Francis Anthony Via, Grigorii Lev Soloveichik, Philip George Kosky, Walter Vladimir Cicha
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Patent number: 6054107Abstract: A process for producing phosgene is disclosed which involves contacting a mixture comprising CO and Cl.sub.2 (e.g, at about 300.degree. C. or less) with a silicon carbide catalyst having a surface area of at least 10 m.sup.2.g.sup.-1.Type: GrantFiled: December 17, 1998Date of Patent: April 25, 2000Assignee: E. I. du Pont de Nemours and CompanyInventors: Walter Vladimir Cicha, Leo Ernest Manzer
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Patent number: 6022993Abstract: A process for producing phosgene is disclosed which involves contacting a mixture comprising CO and Cl.sub.2 (e.g., at about 300.degree. C. or less) with carbon having an active metal content of less than 1000 ppm by weight and a high degree of oxidative stability (i.e., a weight loss of about 12 percent, or less, in the WVC Temperature Test as defined herein).Type: GrantFiled: March 9, 1998Date of Patent: February 8, 2000Assignee: E. I. du Pont de Nemours and CompanyInventors: Walter Vladimir Cicha, Leo E. Manzer
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Patent number: 5910297Abstract: A process suitable for producing high purity alkaline earth fluoride product is disclosed which involves (a) mixing (i) MgO, CaO, BaO, Mg(OH).sub.2, Ca(OH).sub.2, and/or Ba(OH).sub.2, (ii) NaOH, KOH and/or NH.sub.4 OH, and (iii) water, to form an aqueous slurry having a temperature of at least 20.degree. C. and an aqueous phase pH of at least 13; (b) adding fluosilicic acid, optionally adding additional water and optionally adding additional NaOH, KOH and/or NH.sub.4 OH to the slurry of (a) at a rate which maintains an aqueous phase pH of 11 or above, and in an amount to provide a molar ratio of Si: (Mg, Ca, and Ba) of at least 1:3.3, a molar ratio of (Na, K, and NH.sub.4):Si of at least 2:1, and a molar ratio of water:Si of at least 20:1, and to obtain a precipitate comprising an alkaline earth fluoride (MgF.sub.2, CaF.sub.2 and/or BaF.sub.2), and an aqueous solution of a soluble silicon anionic compound; and (c) recovering the alkaline earth fluoride product.Type: GrantFiled: July 13, 1998Date of Patent: June 8, 1999Assignee: E. I. du Pont de Nemours and CompanyInventors: Walter Vladimir Cicha, Donald Keith Swanson
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Patent number: 5879652Abstract: A process for producing sulfuryl chloride and/or thionyl chloride is disclosed which involves contacting a mixture comprising SO.sub.2 and Cl.sub.2 (e.g., at about 300.degree. C. or less) with carbon having an active metal content of less than 1000 ppm by weight and a high degree of oxidative stability (i.e., a weight loss of about 12%, or less, in the WVC Temperature Test as defined herein).Type: GrantFiled: June 24, 1997Date of Patent: March 9, 1999Assignee: E. I. du Pont de Nemours and CompanyInventors: Walter Vladimir Cicha, Leo Ernest Manzer
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Patent number: 5773637Abstract: A process is disclosed for preparing a perfluoroalkyl sulfonate of the formula R.sub.a MX.sub.b-c O.sub.g ?(SO.sub.3).sub.d (R.sub.f).sub.e !.sub.c. This process involves reacting a reagent of the fonnula R.sub.a MX.sub.b O.sub.g and a second reagent of the formula R'.sub.x E?(SO.sub.3).sub.d (R.sub.f).sub.e !.sub.y,whereR is selected from the group consisting of C.sub.1 to C.sub.6 alkyl, C.sub.1 to C.sub.6 perfluoroalkyl, cyclopentadienyl (i.e., C.sub.5 H.sub.5), phenyl and perfluorophenyl;M is selected from the group consisting of transistion metals of groups 3 to 12, main group elements of group 13 to 16 and lanthanide metals;X is selected from the group consisting of F, Cl and Br;R.sub.f is selected from the group consisting of C.sub.h F.sub.2h+1, C.sub.h F.sub.2h, wherein h is an integer from 0 to 10, perfluorophenyl, C.sub.6 F.sub.4 (CF.sub.2).sub.2 i, wherein i is an integer from 0 to 6, provided that when E is boron, R.sub.f is selected from the group consisting of C.sub.h' F.sub.Type: GrantFiled: September 6, 1996Date of Patent: June 30, 1998Assignee: E. I. du Pont de Nemours and CompanyInventors: Walter Vladimir Cicha, Andreas Josef Kornath, Ronald James McKinney, V. N. Mallikarjuna Rao, Joseph Stuart Thrasher, Alfred Waterfeld
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Patent number: 5759508Abstract: A process for producing sulfuryl chloride and/or thionyl chloride is disclosed which involves contacting a mixture comprising SO.sub.2 and Cl.sub.2 (e.g., at about 300.degree. C. or less) with a silicon carbide catalyst having a surface area of at least 10 m.sup.2 .multidot.g.sup.-1.Type: GrantFiled: June 24, 1997Date of Patent: June 2, 1998Assignee: E. I. du Pont de Nemours and CompanyInventors: Walter Vladimir Cicha, Leo Ernest Manzer