Patents by Inventor Walter Vladimir Cicha

Walter Vladimir Cicha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090321721
    Abstract: The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.
    Type: Application
    Filed: April 25, 2007
    Publication date: December 31, 2009
    Applicant: General Electric Company
    Inventors: Patrick Roland Lucien Malenfant, Ji-Ung Lee, Yun Li, Walter Vladimir Cicha
  • Patent number: 7247670
    Abstract: A nanostructure having at least one nanotube and at least one chemical moiety non-covalently attached to the at least one nanotube. At least one dendrimer is bonded to the chemical moiety. The chemical moiety may include soluble polymers, soluble oligomers, and combinations thereof. A method of dispersing at least one nanotube is also described. The method includes providing at least one nanotube and at least one chemical moiety to a solvent; debundling the nanotube; and non-covalently attaching a chemical moiety to the nanotube, wherein the non-covalently attached chemical moiety disperses the nanotube. A method of separating at least one semi-conducting carbon nanotube is also described.
    Type: Grant
    Filed: August 24, 2004
    Date of Patent: July 24, 2007
    Assignee: General Electric Company
    Inventors: Patrick Roland Lucien Malenfant, Walter Vladimir Cicha, Pierre-Andre Bui, Davide Louis Simone
  • Patent number: 7226818
    Abstract: The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.
    Type: Grant
    Filed: October 15, 2004
    Date of Patent: June 5, 2007
    Assignee: General Electric Company
    Inventors: Patrick Roland Lucien Malenfant, Ji-Ung Lee, Yun Li, Walter Vladimir Cicha
  • Patent number: 6500984
    Abstract: A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.
    Type: Grant
    Filed: January 25, 2002
    Date of Patent: December 31, 2002
    Assignee: General Electric Company
    Inventors: Francis Anthony Via, Grigorii Lev Soloveichlk, Philip George Kosky, Walter Vladimir Cicha
  • Publication number: 20020188156
    Abstract: A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.
    Type: Application
    Filed: January 25, 2002
    Publication date: December 12, 2002
    Inventors: Francis Anthony Via, Grigorii Lev Soloveichik, Philip George Kosky, Walter Vladimir Cicha
  • Patent number: 6399823
    Abstract: A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: June 4, 2002
    Assignee: General Electric Company
    Inventors: Francis Anthony Via, Grigorii Lev Soloveichik, Philip George Kosky, Walter Vladimir Cicha
  • Patent number: 6054107
    Abstract: A process for producing phosgene is disclosed which involves contacting a mixture comprising CO and Cl.sub.2 (e.g, at about 300.degree. C. or less) with a silicon carbide catalyst having a surface area of at least 10 m.sup.2.g.sup.-1.
    Type: Grant
    Filed: December 17, 1998
    Date of Patent: April 25, 2000
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Walter Vladimir Cicha, Leo Ernest Manzer
  • Patent number: 6022993
    Abstract: A process for producing phosgene is disclosed which involves contacting a mixture comprising CO and Cl.sub.2 (e.g., at about 300.degree. C. or less) with carbon having an active metal content of less than 1000 ppm by weight and a high degree of oxidative stability (i.e., a weight loss of about 12 percent, or less, in the WVC Temperature Test as defined herein).
    Type: Grant
    Filed: March 9, 1998
    Date of Patent: February 8, 2000
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Walter Vladimir Cicha, Leo E. Manzer
  • Patent number: 5910297
    Abstract: A process suitable for producing high purity alkaline earth fluoride product is disclosed which involves (a) mixing (i) MgO, CaO, BaO, Mg(OH).sub.2, Ca(OH).sub.2, and/or Ba(OH).sub.2, (ii) NaOH, KOH and/or NH.sub.4 OH, and (iii) water, to form an aqueous slurry having a temperature of at least 20.degree. C. and an aqueous phase pH of at least 13; (b) adding fluosilicic acid, optionally adding additional water and optionally adding additional NaOH, KOH and/or NH.sub.4 OH to the slurry of (a) at a rate which maintains an aqueous phase pH of 11 or above, and in an amount to provide a molar ratio of Si: (Mg, Ca, and Ba) of at least 1:3.3, a molar ratio of (Na, K, and NH.sub.4):Si of at least 2:1, and a molar ratio of water:Si of at least 20:1, and to obtain a precipitate comprising an alkaline earth fluoride (MgF.sub.2, CaF.sub.2 and/or BaF.sub.2), and an aqueous solution of a soluble silicon anionic compound; and (c) recovering the alkaline earth fluoride product.
    Type: Grant
    Filed: July 13, 1998
    Date of Patent: June 8, 1999
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Walter Vladimir Cicha, Donald Keith Swanson
  • Patent number: 5879652
    Abstract: A process for producing sulfuryl chloride and/or thionyl chloride is disclosed which involves contacting a mixture comprising SO.sub.2 and Cl.sub.2 (e.g., at about 300.degree. C. or less) with carbon having an active metal content of less than 1000 ppm by weight and a high degree of oxidative stability (i.e., a weight loss of about 12%, or less, in the WVC Temperature Test as defined herein).
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: March 9, 1999
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Walter Vladimir Cicha, Leo Ernest Manzer
  • Patent number: 5773637
    Abstract: A process is disclosed for preparing a perfluoroalkyl sulfonate of the formula R.sub.a MX.sub.b-c O.sub.g ?(SO.sub.3).sub.d (R.sub.f).sub.e !.sub.c. This process involves reacting a reagent of the fonnula R.sub.a MX.sub.b O.sub.g and a second reagent of the formula R'.sub.x E?(SO.sub.3).sub.d (R.sub.f).sub.e !.sub.y,whereR is selected from the group consisting of C.sub.1 to C.sub.6 alkyl, C.sub.1 to C.sub.6 perfluoroalkyl, cyclopentadienyl (i.e., C.sub.5 H.sub.5), phenyl and perfluorophenyl;M is selected from the group consisting of transistion metals of groups 3 to 12, main group elements of group 13 to 16 and lanthanide metals;X is selected from the group consisting of F, Cl and Br;R.sub.f is selected from the group consisting of C.sub.h F.sub.2h+1, C.sub.h F.sub.2h, wherein h is an integer from 0 to 10, perfluorophenyl, C.sub.6 F.sub.4 (CF.sub.2).sub.2 i, wherein i is an integer from 0 to 6, provided that when E is boron, R.sub.f is selected from the group consisting of C.sub.h' F.sub.
    Type: Grant
    Filed: September 6, 1996
    Date of Patent: June 30, 1998
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Walter Vladimir Cicha, Andreas Josef Kornath, Ronald James McKinney, V. N. Mallikarjuna Rao, Joseph Stuart Thrasher, Alfred Waterfeld
  • Patent number: 5759508
    Abstract: A process for producing sulfuryl chloride and/or thionyl chloride is disclosed which involves contacting a mixture comprising SO.sub.2 and Cl.sub.2 (e.g., at about 300.degree. C. or less) with a silicon carbide catalyst having a surface area of at least 10 m.sup.2 .multidot.g.sup.-1.
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: June 2, 1998
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Walter Vladimir Cicha, Leo Ernest Manzer