Patents by Inventor Walter Zygmunt
Walter Zygmunt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7704897Abstract: The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.Type: GrantFiled: February 22, 2008Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Young S. Lee, Agnieszka Jakubowicz, Zhong Qiang Hua, Rionard Purnawan, Sanjay Kamath, Walter Zygmunt
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Publication number: 20090215281Abstract: The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.Type: ApplicationFiled: February 22, 2008Publication date: August 27, 2009Applicant: Applied Materials, Inc.Inventors: HEMANT P. MUNGEKAR, Young S. Lee, Agnieszka Jakubowicz, Zhong Qiang Hua, Rionard Purnawan, Sanjay Kamath, Walter Zygmunt
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Patent number: 7196021Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: GrantFiled: March 30, 2005Date of Patent: March 27, 2007Assignee: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
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Publication number: 20050181632Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: ApplicationFiled: March 30, 2005Publication date: August 18, 2005Applicant: Applied Materials, Inc., A Delaware corporationInventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
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Patent number: 6929700Abstract: A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.Type: GrantFiled: March 25, 2003Date of Patent: August 16, 2005Assignee: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa
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Patent number: 6914016Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: GrantFiled: January 21, 2004Date of Patent: July 5, 2005Assignee: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
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Publication number: 20040152341Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: ApplicationFiled: January 21, 2004Publication date: August 5, 2004Applicant: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing LI, Walter Zygmunt
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Patent number: 6740601Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: GrantFiled: May 11, 2001Date of Patent: May 25, 2004Assignee: Applied Materials Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
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Publication number: 20030159656Abstract: A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.Type: ApplicationFiled: March 25, 2003Publication date: August 28, 2003Applicant: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa
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Publication number: 20030157812Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.Type: ApplicationFiled: February 25, 2003Publication date: August 21, 2003Applicant: Applied Materials, Inc.Inventors: Pravin Narwankar, Sameer Desai, Walter Zygmunt, Turgut Sahin, Laxman Murugesh
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Patent number: 6596653Abstract: A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.Type: GrantFiled: May 11, 2001Date of Patent: July 22, 2003Assignee: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa
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Patent number: 6579811Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.Type: GrantFiled: December 20, 2000Date of Patent: June 17, 2003Assignee: Applied Materials Inc.Inventors: Pravin Narwankar, Sameer Desai, Walter Zygmunt, Turgut Sahin, Laxman Murugesh
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Publication number: 20020187656Abstract: A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.Type: ApplicationFiled: May 11, 2001Publication date: December 12, 2002Applicant: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa
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Publication number: 20020187655Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: ApplicationFiled: May 11, 2001Publication date: December 12, 2002Applicant: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
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Publication number: 20010001175Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.Type: ApplicationFiled: December 20, 2000Publication date: May 17, 2001Inventors: Pravin Narwankar, Sameer Desai, Walter Zygmunt, Turgut Sahin, Laxman Murugesh
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Patent number: 6200911Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.Type: GrantFiled: April 21, 1998Date of Patent: March 13, 2001Assignee: Applied Materials, Inc.Inventors: Pravin Narwankar, Sameer Desai, Walter Zygmunt, Turgut Sahin, Laxman Murugesh