Abstract: Cathode active materials for lithium secondary batteries and lithium secondary batteries including the cathode active materials are disclosed. In some implementations, a cathode active material for a lithium secondary battery includes a lithium metal phosphate particle having a crystallite size in a range from 150 nm to 450 nm in a direction of a crystallographic plane (020) as measured by an X-ray diffraction (XRD) analysis. In some implementations, a lithium secondary battery includes a cathode including a cathode active material layer that includes a cathode active material for a lithium secondary battery, and an anode facing the cathode. In some implementations, an electrode crystallite size ratio defined by Equation 4 is in a range from 0.5 to 0.9.

Abstract: A touch detection module, includes: a plurality of driving electrodes arranged side by side; a plurality of sensing electrodes staggered with respect to the driving electrodes; and a touch driving circuit configured to supply touch driving signals to the plurality of driving electrodes and to detect touch detection signals through the plurality of sensing electrodes to identify touch position coordinates, wherein the touch driving circuit is configured: to vary frequency modulation parameter set values in response to a change in a frequency of reference clocks, and to generate and supply a frequency of the touch driving signals by using the reference clocks and a varied frequency modulation parameter set value.

Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: Disclosed herein is an image forming apparatus. The image forming apparatus includes at least one pressing unit configured to bring the developing roller and the photoreceptor in contact with each other, an operating unit which is configured to be in an operating position during which a pressing force of the pressing unit is generated, and a standby during at which the pressing force is released, and a cover unit detachably provided to one side of the developing device and configured to guide movement of the operating unit to the operating position. By this configuration, operation of the operating unit is linked with an operation of detachment or attachment of the cover unit.

Abstract: An image forming device comprises: an exposer having a plurality of light emitting devices, a light emitting device among the plurality of light emitting devices to transmit light toward a photosensitive drum; and a developer to develop an electrostatic latent image formed on a surface of the photosensitive drum by the light, wherein the light emitting device among the plurality of light emitting devices includes: a light emitting layer to generate the light; and a reflective layer to reflect at least a portion of the generated light. The reflective layer can include a plurality of sub-reflective layers, in which a thickness of a sub-reflective layer among the plurality of sub-reflective layers is different from a thickness of another sub-reflective layer among the plurality of sub-reflective layers, and/or a refractive index of a sub-reflective layer among the plurality of sub-reflective layers is different from a refractive index of another sub-reflective layer among the plurality of sub-reflective layers.

Abstract: An image forming device comprises: an exposer having a plurality of light emitting devices, a light emitting device among the plurality of light emitting devices to transmit light toward a photosensitive drum; and a developer to develop an electrostatic latent image formed on a surface of the photosensitive drum by the light, wherein the light emitting device among the plurality of light emitting devices includes: a light emitting layer to generate the light; and a reflective layer to reflect at least a portion of the generated light. The reflective layer can include a plurality of sub-reflective layers, in which a thickness of a sub-reflective layer among the plurality of sub-reflective layers is different from a thickness of another sub-reflective layer among the plurality of sub-reflective layers, and/or a refractive index of a sub-reflective layer among the plurality of sub-reflective layers is different from a refractive index of another sub-reflective layer among the plurality of sub-reflective layers.

Abstract: An image forming apparatus has an improved structure which avoids additional expenses associated with packing a developing unit and allows the developing unit to be stably stored. The image forming apparatus may include a body, a first developing unit accommodating portion and a second developing unit accommodating portion disposed at different positions in the body, and a developing unit which is allowed to be detachably accommodated in the first developing unit accommodating portion and the second developing unit accommodating portion. When accommodated in the first developing unit accommodating portion, the developing unit may be disposed such that it does not perform image formation. When accommodated in the second developing unit accommodating portion, the developing unit may be disposed to perform image formation.

Abstract: Disclosed herein is an image forming apparatus. The image forming apparatus includes at least one pressing unit configured to bring the developing roller and the photoreceptor in contact with each other, an operating unit which is configured to be in an operating position during which a pressing force of the pressing unit is generated, and a standby during at which the pressing force is released, and a cover unit detachably provided to one side of the developing device and configured to guide movement of the operating unit to the operating position. By this configuration, operation of the operating unit is linked with an operation of detachment or attachment of the cover unit.

Abstract: According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.

Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.

Abstract: According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a second portion of the semiconductor region and being configured to reflect light from the light-emitting structure, wherein the second reflection metal layer is spaced apart from the first reflection metal layer and at least partially covers the first reflection metal layer.

Abstract: There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.