Patents by Inventor Wanjuan Zhang

Wanjuan Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11520225
    Abstract: A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: December 6, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Feng Bai, Wanjuan Zhang, Yingfang Wang
  • Patent number: 11307502
    Abstract: Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: April 19, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Feng Bai, Wanjuan Zhang, Yibin Huang, Yao Xu, Fan Zhang
  • Publication number: 20210271176
    Abstract: Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices.
    Type: Application
    Filed: November 19, 2020
    Publication date: September 2, 2021
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Feng Bai, Wanjuan Zhang, Yibin Huang, Yao Xu, Fan Zhang
  • Publication number: 20210208499
    Abstract: A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.
    Type: Application
    Filed: September 23, 2020
    Publication date: July 8, 2021
    Inventors: Feng BAI, Wanjuan ZHANG, Yingfang WANG
  • Patent number: 9256703
    Abstract: A method of testing a scattering bar by simulation includes preparing an OPC mask model including a main pattern and a scattering bar pattern, forming a scattering bar OPC model by adjusting an image plane of the OPC mask model located at a middle portion of a photoresist layer to a top portion of the photoresist layer, simulating an exposure of the scattering bar OPC model, simulating a profile of the exposed scattering bar OPC model, and testing the simulated profile.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: February 9, 2016
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Wanjuan Zhang, Yibin Huang