Patents by Inventor Wanlei DAI

Wanlei DAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10784389
    Abstract: The invention relates a full-laser scribing method for a flexible stainless steel substrate solar cell module, comprising: preparing an insulating layer and a molybdenum layer on a stainless steel substrate in sequence; using a laser I to scribe the prepared insulating layer and molybdenum layer to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; using a laser II to make scribe and thus form a second scribed line (P2), wherein the second scribed line P2 is parallel with the first scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III to make scribe and thus form a third scribed line (P3), wherein the third scribed line P3 is parallel with the first scribed line P1.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: September 22, 2020
    Assignees: Beijing Sifang Crenergey Optoelectronics Technology Co., Ltd., Beijing Sifang Automation Co., Ltd.
    Inventors: Ning Zhang, Xinping Yu, Wanlei Dai, Yuandong Liu, Wei Zhang, Zhe Sun
  • Patent number: 10418508
    Abstract: Disclosed is a full-laser scribing method for a large-area copper indium gallium selenide (CIGS) thin-film solar cell module, including: using a laser I to scribe a molybdenum thin film prepared on soda-lime glass to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; after finishing preparation of the above film layers, using a laser II for scribing to form a second scribed line (P2), wherein the scribed line P2 is parallel with the scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III for scribing to form a third scribed line (P3), wherein the scribed line P3 is parallel with the scribed line P1.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: September 17, 2019
    Assignees: BEIJING SIFANG AUTOMATION CO., LTD., BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ning Zhang, Xinping Yu, Wanlei Dai
  • Publication number: 20190237600
    Abstract: The invention relates a full-laser scribing method for a flexible stainless steel substrate solar cell module, comprising: preparing an insulating layer and a molybdenum layer on a stainless steel substrate in sequence; using a laser I to scribe the prepared insulating layer and molybdenum layer to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; using a laser II to make scribe and thus form a second scribed line (P2), wherein the second scribed line P2 is parallel with the first scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III to make scribe and thus form a third scribed line (P3), wherein the third scribed line P3 is parallel with the first scribed line P1.
    Type: Application
    Filed: December 28, 2016
    Publication date: August 1, 2019
    Applicants: Beijing Sifang Crenergey Optoelectronics Technology Co., Ltd., Beijing Sifang Automation Co., Ltd.
    Inventors: Ning Zhang, Xinping Yu, Wanlei Dai, Yuandong Liu, Wei Zhang, Zhe Sun
  • Publication number: 20180114876
    Abstract: Disclosed is a full-laser scribing method for a large-area copper indium gallium selenide (CIGS) thin-film solar cell module, including: using a laser I to scribe a molybdenum thin film prepared on soda-lime glass to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; after finishing preparation of the above film layers, using a laser II for scribing to form a second scribed line (P2), wherein the scribed line P2 is parallel with the scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III for scribing to form a third scribed line (P3), wherein the scribed line P3 is parallel with the scribed line P1.
    Type: Application
    Filed: May 17, 2016
    Publication date: April 26, 2018
    Applicants: BEIJING SIFANG AUTOMATION CO., LTD., BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ning ZHANG, Xinping YU, Wanlei DAI