Abstract: One or more techniques are provided for programming a flash memory device. In one embodiment, the memory device is programmed such that a data pattern written to a page in the memory device has encoded therein an expected count value corresponding to the number of times a first binary value occurs in the data pattern. The data pattern includes the program data and the expected count value, and is written to the page in a single operation. The expected count value may be stored in a count field in the management area of the page. During a page read operation, the expected count value is compared to the actual count of the number of bits having the first binary value in the data area of the page. If the expected count is equal to the actual count, then the program data is determined to be valid.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: A non-volatile memory and erase block/data block/sector/cluster update and address translation scheme utilizing a version number is detailed that enhances data updating and helps reduce program disturb of the memory cells of the non-volatile memory device. The various embodiments utilize a version number associated with each erase block, data block, sector, and/or cluster. This allows for determination of currently valid data block, sector and/or cluster associated with the logical ID of the data grouping by locating the most recent version associated with the logical ID. With this approach, old data need not be invalidated by programming a valid/invalid flag, avoiding the risk of program disturb in the surrounding data rows.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: The present disclosure includes methods, memory controllers and devices for wear leveling a memory. One method embodiment includes selecting, in at least a substantially random manner, a number of memory locations as at least a portion of a sample subset, the sample subset including fewer than all memory locations of the memory. A memory location having a particular wear level characteristic is identified from among the sample subset of memory locations, and data is written to the memory location identified from among the sample subset.

Abstract: A non-volatile memory and erase block/data block/sector/cluster update and address translation scheme utilizing a version number is detailed that enhances data updating and helps reduce program disturb of the memory cells of the non-volatile memory device. The various embodiments utilize a version number associated with each erase block, data block, sector, and/or cluster. This allows for determination of currently valid data block, sector and/or cluster associated with the logical ID of the data grouping by locating the most recent version associated with the logical ID. With this approach, old data need not be invalidated by programming a valid/invalid flag, avoiding the risk of program disturb in the surrounding data rows.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: One or more techniques are provided for programming a flash memory device. In one embodiment, the memory device is programmed such that a data pattern written to a page in the memory device has encoded therein an expected count value corresponding to the number of times a first binary value occurs in the data pattern. The data pattern includes the program data and the expected count value, and is written to the page in a single operation. The expected count value may be stored in a count field in the management area of the page. During a page read operation, the expected count value is compared to the actual count of the number of bits having the first binary value in the data area of the page. If the expected count is equal to the actual count, then the program data is determined to be valid.

Abstract: A non-volatile memory and erase block/data block/sector/cluster update and address translation scheme utilizing a version number is detailed that enhances data updating and helps reduce program disturb of the memory cells of the non-volatile memory device. The various embodiments utilize a version number associated with each erase block, data block, sector, and/or cluster. This allows for determination of currently valid data block, sector and/or cluster associated with the logical ID of the data grouping by locating the most recent version associated with the logical ID. With this approach, old data need not be invalidated by programming a valid/invalid flag, avoiding the risk of program disturb in the surrounding data rows.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: A single segment data structure and method for storing data objects employing a single segment data object having a header and a data record. The header includes a segment length field describing the length of memory reserved for the data record and the data record contains at least one data instance object. Each of the data instance objects has a data instance header and data field. The header includes a data instance state field and a data instance length field. The data instance length field contains data representing the length of the data instance data field allowing for variable length “in place” updating. The data instance state field contains data representing an object state of the instance data. Only one of the data instance objects of the data record of the single segment data object has a valid object state. The state field facilitates a power loss recovery process.

Abstract: A single segment data structure and method for storing data objects employing a single segment data object having a header and a data record. The header includes a segment length field describing the length of memory reserved for the data record and the data record contains at least one data instance object. Each of the data instance objects has a data instance header and data field. The header includes a data instance state field and a data instance length field. The data instance length field contains data representing the length of the data instance data field allowing for variable length “in place” updating. The data instance state field contains data representing an object state of the instance data. Only one of the data instance objects of the data record of the single segment data object has a valid object state. The state field facilitates a power loss recovery process.

Abstract: Embodiments for partitioning a non-volatile memory device is described. In one embodiment a memory system includes a first addressable range of memory blocks for storing different types of data. The memory system is partitioned to include a second addressable range of memory blocks capable of storing data indicating attributes of the first addressable range of memory blocks. The second addressable range of memory blocks may also be periodically updated such that the capacities of the first addressable range of memory blocks may be dynamically adjusted depending on application needs and changes to the non-volatile memory device over time. In some embodiments, one partition of a memory device may be configured for high reliability data storage while a second partition is configured for normal reliability storage.

Abstract: Various embodiments include methods, apparatus, and systems for assigning a plurality of version number values to instances of a logical entity of a memory device. Each version number value of the plurality version number values may be separately assigned to one of the instances of the logical entity. The version number values may be recycled after the plurality of version number values are assigned. Other embodiments including additional methods, apparatus, and systems are disclosed.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

Abstract: An improved non-volatile memory and logical block to physical block address translation method utilizing a cluster based addressing scheme is detailed. The translation of logical blocks/sectors to the physical blocks/sectors is necessary for a non-volatile memory to appear as a freely rewriteable device to a system or processor. Embodiments of the present invention utilize cluster based address translation to translate logical block addresses to physical block addresses, wherein each cluster contains a plurality of sequentially addressed logical blocks. This allows the use of a smaller RAM table for the address translation lookup and/or faster scanning of the memory device or memory subsystem for the matching cluster address. In one embodiment, a specially formatted cluster is utilized for frequently updated sectors/logical blocks, where the cluster stores a single logical block and a new sequential physical block of the cluster is written in turn with each update.

Abstract: A method for managing a range of memory in a flash memory space in which a plurality of data objects are stored. A volume defined for the range of memory has a first end and second end, with a respective list of data objects associated with each end. The volume can be resized, moved, and reallocated in the flash memory space without recompilation.

Abstract: A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.