Patents by Inventor Wanyin Kwan

Wanyin Kwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9355660
    Abstract: A testing method of a magnetic head includes: applying a first magnetic field with a constant intensity in a first direction that is the same with that of the longitudinal bias field to the magnetic head, simultaneously applying a second magnetic field with variant intensities in a second direction traversing the air bearing surface, and measuring a first noise; applying a third magnetic field with a constant intensity in a third direction that is opposite to the first direction to the magnetic head, simultaneously applying the second magnetic field with variant intensities in the second direction, and measuring a second noise; and analyzing noise change between the first noise and the second noise. The invention can screen out defective magnetic heads that possess poor noise characteristic and unstable performance.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: May 31, 2016
    Assignee: SAE MAGNETICS (H.K.) LTD.
    Inventors: Hokei Lam, Mankit Lee, Cheukman Lui, Wahchun Chan, Juren Ding, Rongkwang Ni, Cheukwing Leung, Wanyin Kwan
  • Publication number: 20140334279
    Abstract: A testing method of a magnetic head includes: applying a first magnetic field with a constant intensity in a first direction that is the same with that of the longitudinal bias field to the magnetic head, simultaneously applying a second magnetic field with variant intensities in a second direction traversing the air bearing surface, and measuring a first noise; applying a third magnetic field with a constant intensity in a third direction that is opposite to the first direction to the magnetic head, simultaneously applying the second magnetic field with variant intensities in the second direction, and measuring a second noise; and analyzing noise change between the first noise and the second noise. The invention can screen out defective magnetic heads that possess poor noise characteristic and unstable performance.
    Type: Application
    Filed: June 21, 2013
    Publication date: November 13, 2014
    Inventors: Hokei LAM, Mankit LEE, Cheukman LUI, Wahchun CHAN, Juren DING, Rongkwang NI, Cheukwing LEUNG, Wanyin KWAN
  • Patent number: 8767356
    Abstract: An MR sensor includes a first shielding layer, a second shielding layer, an MR element formed therebetween, and a pair of hard magnet layers respectively placed on two sides of the MR element. The MR element includes an AFM layer formed on the first shielding layer, a pinned layer formed on the AFM layer and a free layer formed between the pinned layer and the second shielding layer. The free layer is funnel-shaped, which has a first edge facing an air bearing surface and a second edge opposite the first edge, and the first edge has a narrower width than that of the second edge. The MR sensor can improve MR height control performance, and improve the ESD performance and decrease the PCN and RTN and, in turn, get a more stable performance. The present invention also discloses a magnetic head, an HGA and a disk drive unit.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: July 1, 2014
    Assignees: SAE Magnetics (H.K.) Ltd., TDK Corporation
    Inventors: Chiuming Leung, Kosuke Tanaka, Kazuki Sato, Cheukwing Leung, Juren Ding, Rongkwang Ni, Wanyin Kwan, Mankit Lee
  • Patent number: 8664950
    Abstract: A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: March 4, 2014
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: Siuman Mok, Hokei Lam, Cheukwing Leung, Juren Ding, Rongkwang Ni, Wanyin Kwan, Cheukman Lui, Chiuming Lueng
  • Patent number: 8634157
    Abstract: A close loop method for measuring head SNR, for a storage device comprising a storage media and a head, comprising steps of: (a) loading the head on the media with a dynamic fly height; (b) measuring an initial environmental temperature value T1 and measuring the head signal signalload; (c) unloading the head; (d) adjusting a power which controls the dynamic fly height until a real-time environmental temperature value T2 is equal to the initial environmental temperature T1; (e) measuring the head noise value noiseunload, (f) calculating the head SNR with the follow equation: Head_SNR = 20 × log ? ( signal load noise unload ) . The method of the present invention can obtain a fair condition between the signal and noise measurement, thereby a reliable and accurate head SNR can be obtain. The present invention also provides a close loop method for measuring media SNR.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: January 21, 2014
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: Chiuming Lueng, Mankit Lee, Wanyin Kwan, Cheukwing Leung, Juren Ding, Rongkwang Ni
  • Patent number: 8582248
    Abstract: A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: November 12, 2013
    Assignees: SAE Magnetics (H.K.) Ltd., TDK Corporation
    Inventors: Chiuming Lueng, Kazuki Sato, Yohei Koyanagi, Cheukwing Leung, Juren Ding, Rongkwang Ni, Wanyin Kwan, Siuman Mok
  • Publication number: 20120287529
    Abstract: A close loop method for measuring head SNR, for a storage device comprising a storage media and a head, comprising steps of: (a) loading the head on the media with a dynamic fly height; (b) measuring an initial environmental temperature value Ti and measuring the head signal signalload; (c) unloading the head; (d) adjusting a power which controls the dynamic fly height until a real-time environmental temperature value T2 is equal to the initial environmental temperature T1; (e) measuring the head noise value noiseunload, (f) calculating the head SNR with the follow equation: Head_SNR = 20 × log ? ( signal load noise unload ) . The method of the present invention can obtain a fair condition between the signal and noise measurement, thereby a reliable and accurate head SNR can be obtain. The present invention also provides a close loop method for measuring media SNR.
    Type: Application
    Filed: May 12, 2011
    Publication date: November 15, 2012
    Applicant: SAE Magnetics (H.K.) Ltd.
    Inventors: Chiuming Lueng, Mankit Lee, Wanyin Kwan, Cheukwing Leung, Juren Ding, Rongkwang Ni
  • Publication number: 20120249130
    Abstract: A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.
    Type: Application
    Filed: July 1, 2011
    Publication date: October 4, 2012
    Applicant: SAE Magnetics (H.K.) Ltd.
    Inventors: Siuman MOK, Hokei LAM, Cheukwing LEUNG, Juren DING, Rongkwang NI, Wanyin KWAN, Cheukman LUI, Chiuming LUENG
  • Publication number: 20120099227
    Abstract: A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.
    Type: Application
    Filed: January 6, 2011
    Publication date: April 26, 2012
    Applicant: SAE Magnetics (H.K.) Ltd.
    Inventors: Chiuming Lueng, Kazuki Sato, Yohei Koyanagi, Cheukwing Leung, Juren Ding, Rongkwang Ni, Wanyin Kwan, Siuman Mok
  • Publication number: 20110235214
    Abstract: A MR sensor includes a first shielding layer, a second shielding layer, a MR element formed therebetween, and a pair of hard magnet layers respectively placed on two sides of the MR element. The MR element comprises an AFM layer formed on the first shielding layer, a pinned layer formed on the AFM layer and a free layer formed between the pinned layer and the second shielding layer. The free layer is funnel-shaped, which having a first edge facing the air bearing surface and a second edge opposite the first edge, and the first edge has a narrower width than that of the second edge. The structure of the MR sensor can improve MR height control performance, and improve the ESD performance and decrease the PCN and RTN and, in turn, get a more stable performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.
    Type: Application
    Filed: June 11, 2010
    Publication date: September 29, 2011
    Applicants: SAE Magnetics (H.K.) Ltd., TDK Corporation
    Inventors: Chiuming Leung, Kosuke Tanaka, Kazuki Sato, Cheukwing Leung, Juren Ding, Rongkwang Ni, Wanyin Kwan, Mankit Lee