Abstract: A device for sensing a magnetic field, comprising a closed superconducting loop configured to collect a magnetic field to be sensed, hereinafter external magnetic field, the closed superconducting loop having a path width (wp) and being provided with a constriction having a width (wc) narrower than the path width, the constriction generating a non-uniform magnetic field, hereinafter internal magnetic field, in response to the external magnetic field, a vibrating mechanical oscillator coupled to, or formed by the constriction and responsive to the internal magnetic field, and a detector configured to detect deflection or vibration of the mechanical oscillator and providing a signal indicative of the deflection or vibration.

Abstract: A device for sensing a magnetic field, comprising a closed superconducting loop configured to collect a magnetic field to be sensed, hereinafter external magnetic field, the closed superconducting loop having a path width (wp) and being provided with a constriction having a width (wc) narrower than the path width, the constriction generating a non-uniform magnetic field, hereinafter internal magnetic field, in response to the external magnetic field, a vibrating mechanical oscillator coupled to, or formed by the constriction and responsive to the internal magnetic field, and a detector configured to detect deflection or vibration of the mechanical oscillator and providing a signal indicative of the deflection or vibration.

Abstract: The invention relates to a method for the fabrication of a membrane oriented in a (111) plane of a (100) silicon wafer. To this end the method comprises the following steps: applying a mask to both sides of the wafer, wherein portions of the sides are covered by the mask; and the at least partial removal by etching away silicon material from the portions of the two sides of the wafer that are not covered. This method is characterised in that the etching step substantially removes the silicon material forming recesses in the two surfaces of the wafer, such that the walls of the recesses are formed by (111) planes, and in that not covered portions at both sides of the wafer are aligned in relation to one another such that a (111) plane is formed and the distance d between said two planes is less than the thickness of the silicon wafer, so as to form a membrane in the (111) plane having a thickness d.