Abstract: Provided is a curable resin composition comprising a thermoplastic resin (A) that includes a cyclic structure in its main chain, and has a glass transition temperature (Tg) of 140° C. or more, and a monofunctional curable monomer (B). The present invention provides: a cured resin formed article that has heat resistance and low birefringence, a method for producing the same, a curable resin composition and a curable resin formed article that are useful as a raw material for producing the cured resin formed article, and a laminate that includes a layer formed of a cured resin.

Abstract: The present invention provides: a gas barrier film comprising a cured resin layer and a gas barrier layer, the gas barrier layer being provided on at least one side of the cured resin layer, the cured resin layer being a layer formed of a cured product of a curable resin composition that includes (A) a thermoplastic resin having a glass transition temperature (Tg) of 140° C. or more, and (B) a curable monomer, the gas barrier film having a water vapor transmission rate of 1 g/m2/day or less at a temperature of 40° C. and a relative humidity of 90%; a method for producing the gas barrier film; a gas barrier film laminate comprising the gas barrier film; an electronic device member comprising the gas barrier film; an electronic device member comprising the gas barrier film laminate; an electronic device comprising the electronic device member.

Abstract: The invention is a formed article including a gas barrier layer, the gas barrier layer including a surface layer part that is formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, the surface layer part having a carbon atom content rate of more than 0 and not more than 70%, an oxygen atom content rate of 10 to 70%, a nitrogen atom content rate of 0 to 35%, and a silicon atom content rate of 20 to 55%, based on a total content rate of carbon atoms, oxygen atoms, nitrogen atoms, and silicon atoms; a method for producing the formed article; an electronic device member including the formed article; and an electronic device comprising the electronic device member. The formed article of the invention exhibits an excellent gas barrier capability, excellent transparency, and excellent bending resistance. The method for producing a formed article of the invention can efficiently, safely, and conveniently produce the formed article of the invention.

Abstract: Provided a formed article comprising a layer that includes a polysilazane compound and a clay mineral, and having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 6.0 g/m2/day or less. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability, excellent transparency, and excellent bending resistance, a method for producing the formed article, and an electronic device member, or the like, comprising the formed article are provided.

Abstract: Provided is a formed article including a layer obtained by implanting ions of a hydrocarbon compound into a polysilazane compound-containing layer. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability and excellent bending resistance, a method for producing the formed article, and an electronic device member, or the like, comprising the formed article are provided.

Abstract: Disclosed is a transparent conductive film, including a substrate and, formed on at least one surface of the substrate, a gas barrier layer and a transparent conductive layer, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, nitrogen atoms, and silicon atoms, and includes a surface layer part which has an oxygen atom fraction of 60 to 75%, a nitrogen atom fraction of 0 to 10%, and a silicon atom fraction of 25 to 35%, each atom fraction being calculated with respect to the total number of the oxygen atoms, nitrogen atoms, and silicon atoms contained in the surface layer part and which has a film density of 2.4 to 4.0 g/cm3.