Abstract: A solid electrolyte comprising a domain including an acid moiety and a matrix domain, wherein the domain and the matrix domain form 3-dimensional crosslinking structure comprising a carbon-carbon bond of a polymer main chain and polyether crosslink, and the solid electrolyte has ion conductivity of 0.010 S/cm or more, methanol diffusion coefficient of 4×10?7 cm2/s of less, tensile strength of 40 MPa or more, and pressure strength of 500 kgf/cm2 or more.

Abstract: A proton-conductive material which contains a compound having a mesogen substituted with an electron-attracting group. The proton-conductive material has a high ionic conductivity, a small methanol crossover, and a high film strength.

Abstract: To increase data transfer rate of a memory system in which a plurality of memory modules are stacked using mezzanine connectors, stacked blind vias and buried vias for connecting only specific layers are used as vias in a multilayer circuit board serving as a memory module board, and at least some of pads for mounting devices have a pad-on-via structure. Thus, the vias have no redundant portions which are not required for signal transmission and the length of surface-layer wiring can be remarkably reduced.

Abstract: Provided are a proton-exchange membrane of which the ionic conductivity is high and the methanol crossover is low, and a fuel cell of high power that comprises the proton-exchange membrane. The proton-exchange membrane has a structure of mesogen-containing organic molecular chains and a proton-donating group-containing group covalent-bonding to a silicon-oxygen three-dimensional crosslinked matrix, in which at least a part of the organic molecular chains are oriented to form an aggregate thereof; and the fuel cell comprises the membrane.

Abstract: A stacked semiconductor package comprises two semiconductor chips (11, 12) each of which has a mounting surface provided with a plurality of chip pins arranged in a predetermined pattern. The semiconductor chips are mounted on opposite surfaces of a substrate (13) so that the mounting surfaces are faced to each other through the substrate. The substrate is provided with a plurality of package pins formed in an area other than a chip mounting area and arranged in a pattern identical to the predetermined pattern. A pair of the corresponding chip pins of the semiconductor chips are connected to a via formed at an intermediate position therebetween by the use of branch wires equal in length to each other. The via is connected by a common wire to the package pin corresponding to the chip pins connected to the via.

Abstract: An object of the present invention is to reduce the adhesion of floating glass particulates to the surface of a soot preform during the manufacture of the soot preform, thereby reducing the voids generated in the transparent glass preform made from the soot preform, and to improve the quality of the optical fiber manufactured from the transparent glass preform. The equipment of the invention is equipped with a reaction vessel 1, a burner 2 provided within the reaction vessel 1 into which raw material gas and combustion gas are supplied so as to generate glass particulates by hydrolysis reaction, and a starting rod 5 onto which the glass particulates generated by the burner 2 are deposited. By drawing up the starting rod 5 while turning it around its axis, the glass particulates are deposited on the tip of or around the starting rod 5 to form a soot preform 6 in column-like shape.

Abstract: A channel switching controller is applied to a communication network such as an ISDN. The network has a first information processor, an exchange, and a second information processor. The channel switching controller easily and speedily switches channels from one to another when a communication error occurs in the network. If communication between the first and second information processors fails, the first information processor notifies the exchange that a communication channel, terminal, or line (telephone number) that is presently being used will be switched to another. In response to the notification, the exchange holds the current call. The first information processor resumes communication through the newly selected communication channel, terminal, or line (telephone number), and the exchange releases the call, to continue the communication between the first and second information processors.

Abstract: In a semiconductor memory device including first and second sub blocks each having a normal memory cell array and at least one redundancy memory cell row, and first and second sub block selecting circuits for selecting the first and second sub blocks, a multiplexer is connected between the first and second sub block selecting circuits and the first and second sub blocks, and redundancy memory cell row exchanging circuits for the redundancy memory cell rows are provided. The multiplexer is controlled in accordance with the output signals of the redundancy memory cell row exchanging circuits and the block selecting circuits, and the selection of the redundancy memory cell rows.

Abstract: The present invention relates to a decorative mold having an uneven pattern for forming a concrete surface with an uneven pattern by transfer. The present decorative mold is made of a molded product of polypropylene type foamed particles having a density of 0.02 to 0.06 g/cm.sup.3 and is formed with an uneven pattern on one surface for forming a pattern on a concrete surface by transfer, and in the surface having the uneven pattern for transfer, the total area, in terms of projected plane, of gap sections present in all the projected plane of the decorative mold accounts for less than 0.5% of all the area, in terms of projected plane, of the decorative mold. The maximum bending strength of the decorative mold determined by pressing from the undersurface opposite to the side having the uneven pattern is preferably 8.0 kgf/cm.sup.2 or more, and the average particle diameter of the polypropylene type resin foamed particles that are a raw material constituting the decorative mold is preferably 1 to 4 mm.