Patents by Inventor Wataru Norimatsu

Wataru Norimatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby
    Patent number: 9227848
    Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: January 5, 2016
    Assignee: National University Corporation Nagoya University
    Inventors: Michiko Kusunoki, Wataru Norimatsu
  • Heat Float Switch
    Publication number: 20140035715
    Abstract: A heat float switch includes a first member and a second member. The first member includes a base member and a carbon nanotube layer formed on a surface of the base member. The heat float switch switches states between a connected state in which the carbon nanotube layer of the first member is in contact with the second member and an unconnected state in which the carbon nanotube layer of the first member is not in contact with the second member.
    Type: Application
    Filed: October 8, 2013
    Publication date: February 6, 2014
    Applicants: National University Corporation Nagoya University, NGK Insulators, LTD.
    Inventors: Tomonori Takahashi, Haruo Otsuka, Michiko Kusunoki, Wataru Norimatsu
  • Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby
    Patent number: 8227069
    Abstract: A graphene/SiC composite material is provided in which a large-area graphene layer that is flat at an atomic level is formed on an SiC single crystal substrate. The process for producing the graphene/SiC composite material includes the steps of removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing an Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming an SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: July 24, 2012
    Assignee: National University Corporation Nagoya University
    Inventors: Michiko Kusunoki, Wataru Norimatsu
  • PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY
    Publication number: 20120145070
    Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
    Type: Application
    Filed: January 20, 2012
    Publication date: June 14, 2012
    Applicant: National University Corporation Nagoya University
    Inventors: Michiko KUSUNOKI, Wataru NORIMATSU
  • PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY
    Publication number: 20110143093
    Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
    Type: Application
    Filed: February 23, 2011
    Publication date: June 16, 2011
    Applicant: National University Corporation Nagoya University
    Inventors: Michiko Kusunoki, Wataru Norimatsu