Abstract: A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.

Abstract: A silicon semiconductor substrate is obtained by deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method from a molten silicon containing not less than 1×1016 atoms/cm3 and not more than 1.5×1019 atoms/cm3 of nitrogen and heat-treating the silicon semiconductor substrate at a temperature of not less than 1000° C. and not more than 1300° C. for not less than one hour and is characterized by the fact that the density of crystal defects measuring not less than 0.1 &mgr;m as reduced to diameter is not more than 104 pieces/cm3 at least in the region reaching a depth of 1 &mgr;m from the surface of the substrate and the nitrogen content at the center of thickness of the silicon semiconductor substrate is not less than 1×1013 atoms/cm3 and not more than 1×1016 atoms/cm3.

Abstract: A surface acoustic wave duplexer of the present invention comprises a first surface acoustic wave filter having a first pass frequency band, a second surface acoustic wave filter having a second pass frequency band lower than the first pass frequency band and including a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, a multi-layer package substrate including first to third package substrates, electrode pads formed on the first package substrate, a first ground potential pattern formed on the second package substrate, the first ground potential pattern being connected to the electrode pads and extending to a central region of the second package substrate and a second ground potential pattern formed on the third package substrate. One end of the parallel arm surface acoustic wave resonator is connected to ground potential via the electrode pads and the first and second ground potential patterns.

Abstract: A branching filter package has a SAW filter chip housing area which houses a piezo electric base, on which a transmitting SAW filter and a receiving SAW filter having a different frequency passing band with each other, are formed, and an impedance matching circuit and a branching circuit for the transmitting SAW filter and the receiving SAW filter.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first plurality of resonators which are connected in series and formed on the piezoelectric substrate, a second plurality of resonators which are connected in parallel and formed on the piezoelectric substrate, an input signal line receiving input signals, a floating electrode being in a floating state and a wire connecting a point on the input signal line to the floating electrode.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first plurality of resonator which is connected in series and formed on said piezoelectric substrate, a second plurality of resonator which is connected in parallel, and formed on said piezoelectric substrate, a input signal line receiving input signals, a floating electrode being in a floating state and a wire connecting a point of said input signal line to said floating electrode.

Abstract: In the growth of a large silicon single crystal weighing not less than 100 kg by the Czokralski method resorting to application of a magnetic field, a crucible, not less than 0.7 m in inside diameter is used, and a cusped magnetic field which manifests a maximum intensity of not more than 1000 gausses on the inner wall of the crucible is applied.

Abstract: An atomization roasting furnace for producing ferrite raw material powder includes an elongated roasting furnace body with a center burner located at the top end thereof. At least three liquid spray nozzles are located in an expansion slope portion below the center burner circumferentially with respect to the center burner. A quencher, located below the elongated roasting furnace body, has a top end connected to a bottom end of the elongated roasting furnace body. Quencher nozzles are located adjacent the top end of the quencher.

Abstract: The invention has for its object to provide a titanium oxide-containing paper possessed of satisfactory deodorizing power and well protected against aging of paper, a corrugated board fabricated from the titanium oxide-containing paper, and a deodorizing element constructed using the corrugated board. The titanium oxide-containing paper comprises an ultrafine particulate titanium oxide with an X-ray particle diameter of not larger than 100 nm (T) or a modified ultrafine particulate titanium oxide available on surface-modification of (T) with a metal or a metal compound (T'), at least one inorganic filler (F) selected from the group consisting of sepiolite, silica gel, bentonite, zeolite, magnesium sulfate, asbestos, and active carbon for supporting the titanium oxide (T) or (T'), and an organic fiber material amenable to web formation by papermaking machine. The deodorizing element is constructed by stacking up a multiplicity of units of the above-mentioned corrugated board.

Abstract: This invention provides an atomization roasting method which can easily obtain a soft ferrite sintered body, for example, a sintered body having a crystal particle size of not greater than 2 .mu.m, by using as a raw material an ultra-fine powder having a mean particle size of not greater than 0.1 .mu.m obtained by atomization roasting and which can obtain a soft ferrite raw material powder subjected to an oxidation reaction, having an extremely small residual chlorine content, and having and extremely small deviation of high vapor pressure components such as zinc between the atomized raw material solution and the oxide as the product and which can economically produce a soft ferrite core having an excellent power loss characteristic in a high frequency range, particularly in a MHz range, and is extremely effective for reducing the size of a high frequency transformer.

Abstract: An amorphous magnetic alloy of a composition represented by Fe.sub.a Si.sub.b B.sub.c Sn.sub.x, where 60<a.ltoreq.90, 1.ltoreq.b.ltoreq.19, 6.ltoreq.c.ltoreq.20, 0.01.ltoreq.x<10 (atomic %) and a+b+c+x=100.

Abstract: Method and apparatus for plating metal or metal alloy on a well-defined area of the surface of an article by forming a liquid plating bath having its surface maintained slightly above the rim of a container by surface tension and passing the surface to be plated in contact with the surface of the bath and spaced from the rim of the container.

Abstract: The present invention quickly and accurately predicts a cast defect during continuous casting, by a sequential temperature-change pattern, and takes and appropriate action in conformity with a position and kind of defect of the cast defect, thereby preventing the cast defect from generating on the casting withdrawn from the mold.

Abstract: A method for controlling an early stage casting in a continuous casting process comprising the steps of commencing to pour molten steel into a mold provided with a dummy bar head through an immersion nozzle provided with a flow rate control device, detecting that a steel level in the mold has reached a predetermined drawing commencement level and commencing drawing of the dummy bar head. A holding time for molten steel in the mold is predetermined, from the commencement of pouring molten steel into the mold to a commencement of the drawing of the dummy bar head, through a solidified shell formation velocity under prevailing operating conditions, and a prediction is made of whether or not, when the steel level has reached the predetermined level, a molten metal holding time substantially equal to the predetermined molten metal holding time can be obtained, and the flow rate of the molten steel is controlled in accordance with the result of the prediction.

Abstract: A width changing method in which the width of a slab under casting is changed by a movement of narrow face of a continuous casting mold by the operation of a horizontal driving device and a rotary driving device operable independently of the horizontal driving device. The period of width changing operation is divided into a forward taper changing period in which each narrow face is inclined toward the center of the mold and a rearward taper changing period in which each mold wall is inlcined away from the center of the mold. The acceleration of the horizontal movement of each narrow face is determined by means of allowable shell deformation resistance as a parameter for each period. Also is determined the angular velocity of the rotary device or the difference in velocity between the upper and lower ends of the narrow face. The width changing operation is conducted while maintaining the acceleration and the angular velocity or the velocity difference at constant levels in respective periods.

Abstract: A width changing method in which the width of a slab under casting is changed by a movement of narrow face of a continuous casting mold by the operation of a horizontal driving device and a rotary driving device operable independently of the horizontal driving device. The period of width changing operation is divided into a forward taper changing period in which each narrow face is inclined toward the center of the mold and a rearward taper changing period in which each mold wall is inclined away from the center of the mold. The acceleration of the horizontal movement of each narrow face is determined by means of allowable shell deformation resistance as a parameter for each period. Also is determined the angular velocity of the rotary device or the difference in velocity between the upper and lower ends of the narrow face. The width changing operation is conducted while maintaining the acceleration and the angular velocity or the velocity difference at constant levels in respective periods.